Process for manufacturing capacitive keyboards and new keyboards obtained by this process

• US 4,743,464 A
• Filed: 12/04/1985
• Issued: 05/10/1988
• Est. Priority Date: 02/13/1984
• Status: Expired due to Fees

• Current Assignee: Mors Composants
• Original Assignee: Mors (Actia Group)
• Inventors: Duchalet, Daniel, Larguier, Jean L.
• Primary Examiner(s): Newsome, John H.
• Application Number:
  US06/787,882
• Time in Patent Office: 888 Days
• Field of Search: 427/58, 427/79, 427/96, 427/98, 340/365 C
• US Class Current: 341/33
• CPC Class Codes: H03K 17/98 having a plurality of control members, e.g. keyboard

Abstract

According to the process, there is applied to one face of a relatively rigid isolating support (1) a first matrix arrangement of areas (3) connected by conductor tracks of lines (4). Said arrangement is coated with a thin layer of isolating lacquer (5) and a second matrix arrangement of areas (6) is set in place on the lacquer layer with their conductor tracks of columns (7) to obtain, by bringing together an armature towards each stud comprised of two areas (3, 6), a capacitive connection.

Claims

1. Process for manufacturing capacitive keyboards of the type comprising, on each side of an insulating material of small thickness, two matrix arrangements, one in lines and the other in columns, of areas associated two by two for forming capacitive studs able to be subjected to the influence of a key for causing a metal armature to draw near thereto, characterized by the succession of steps consisting in applying, on one face (2) of a relatively rigid insulating support (1), a first matrix arrangement of areas (3) with their respective conducting tracks (4) in lines (or columns), in applying a thin insulating layer (5) to this face thus provided with this arrangement such that the thickness of said insulating layer on said areas of said first matrix arrangement is less than or equal to 20 microns, then in positioning on said insulating layer (5) said second matrix arrangement of areas (6) with their respectively conducting tracks (7) disposed in columns (or in lines) whereby a capacitive coupling of respective areas of said two matrix arrangements with little hinderance by said insulating layer is provided.

2. Process according to claim 1, characterized in that a layer of hardenable varnish is applied to the face of the support coated with the first matrix arrangement.

3. The process according to claim 2, characterized in that the varnish is applied so as to obtain a thickness of the order of a few microns.

4. Process according to claim 2, characterized in that a varnish is used formed by a material from the group chosen from the mono-, di-, and tri-fluoroolefins of the ethylene family.

5. Process according to claim 1, characterized in that the first matrix arrangement is applied to a support (1) formed by a rigid plate.

6. Process according to claim 1, characterized in that the first matrix arrangement is applied to a support (1) formed from a flexible foil having inherent strength.

7. Process according to claim 1, characterized in that there are provided, at the same time as one/and or other matrix arrangement, auxiliary areas (8) coinciding in projection with that of the areas (3, 6) disposed on the other side of the layer (5) of insulating material.

8. New keyboard obtained by the process according to claim 1, characterized in that it comprises a relatively rigid support (1) on which is applied a first conducting matrix arrangement comprising areas (3) with their conducting tracks (4) disposed in lines (or columns), a thin insulating layer (5) laid over said support and its arrangement and, on the insulating layer, a second arrangement of areas (6) with their conducting tracks (7) disposed in columns (or lines) on the apparent face of said layer (5).

9. New keyboard according to claim 8, characterized in that the insulating layer is formed of a hardened varnish (5).

10. New keyboard according to claim 9, characterized in that the thickness of the insulating layer is of the order of a few microns.