Manufacturing methods for nonlinear semiconductor element and liquid crystal display panel using the same

• US 4,744,862 A
• Filed: 01/02/1987
• Issued: 05/17/1988
• Est. Priority Date: 10/01/1984
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Konuma, Toshimitsu, Mase, Akira, Miyazaki, Minoru, Sakama, Mitsunori, Yamazaki, Shunpei, Inushima, Takashi
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/000,155
• Time in Patent Office: 501 Days
• Field of Search: 357/58, 350/330, 350/332, 350/333, 350/336, 156/652, 156/656, 156/657, 156/659.1, 156/662, 437/180, 437/181, 437/189, 437/228
• US Class Current: 438/30
• CPC Class Codes: G02F 1/1365 in which the switching element is a two-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 29/167 further characterised by the doping material H01L29/1604 takes precedence
• CPC Class Codes: H01L 29/868 PIN diodes

Abstract

A method of manufacturing a liquid crystal display panel including preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface; forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member where the forming of the first non-single-crystal semiconductor laminate member includes forming at least a first non-single-crystal semiconductor of P (or N) type on the substrate, forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconduictor layer, the i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and forming a third non-single-crystal semiconductor layer of P (or N) type on the i-type second non-single-crystal semiconductor layer; forming a second conductive layer serving as a second electrode in a pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer; selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member; preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer; and filling liquid crystal in a gap defined by the first and second substrate members.

Claims

1. A method of manufacturing a nonlinear semiconductor element comprising the steps of:

(a) forming a first conductive layer, which will ultimately serve as a first electrode, on a substrate having an insulating surface;

(b) forming a first non-single crystal semiconductor layer laminate member on the substrate so that it continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor layer laminate member includes the substeps of;

(1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer,

(2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and

(3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer;

(c) forming a second conductive layer, which will ultimately serve as a second electrode, in a predetermined pattern on the first non-single-crystal semiconductor layer laminate member in opposing relation to the first conductive layer; and

(d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member.

2. A method as in claim 1 wherein said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is P-type.

3. A method as in claim 1 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is N-type.

4. A method as in claim 3 including doping said i-type layer with said boron.

5. A method of manufacturing a liquid crystal display panel comprising the steps of:

(a) preparing a first substrate member by forming a first conductive layer serving as a first electrode on a first substrate having an insulating surface;

(b) forming a first non-single-crystal semiconductor layer laminate layer on the first substrate member which continuously extends on the first conductive layer, where the forming of the first non-single-crystal semiconductor laminate member includes the substeps of;

(1) forming at least a first non-single-crystal semiconductor of a predetermined conductivity type on the substrate and extending on the first conductive layer,

(2) forming an i-type second non-single-crystal semiconductor layer on the first non-single-crystal semiconductor layer, said i-type layer containing an additive selected from the group consisting of carbon, nitrogen, oxygen, boron, and mixtures thereof, and

(3) forming a third non-single-crystal semiconductor layer of said predetermined conductivity type on the i-type second non-single-crystal semiconductor layer;

(c) forming a second conductive layer, which will ultimately serve as a second electrode, in a liquid pattern on the first non-single-crystal semiconductor layer laminate layer in opposing relation to the first conductive layer;

(d) selectively etching away the first non-single-crystal semiconductor layer laminate member through the patterned second conductive layer to obtain a second non-single-crystal semiconductor laminate member;

(e) preparing a second substrate member by forming on a second substrate an insulating surface and a third conductive layer;

(f) positioning said first and second substrate members with respect to each other so that a gap is present therebetween; and

(g) filling liquid crystal in said gap defined by the first and second substrate members.

6. A method as in claim 5 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is P-type.

7. A method as in claim 5 where said predetermined conductivity type of said first and third non-single-crystal semiconductor layers is N-type.

8. A method as in claim 5 including doping said i-type layer with said boron.