Planar tungsten interconnect

• US 4,746,621 A
• Filed: 12/05/1986
• Issued: 05/24/1988
• Est. Priority Date: 12/05/1986
• Status: Expired due to Term

• Current Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Original Assignee: Cornell Research Foundation Incorporated (Cornell University)
• Inventors: Thomas, David C., Wong, S. Simon
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US06/938,498
• Time in Patent Office: 536 Days
• Field of Search: 437/203, 437/24, 437/37, 437/38, 437/200, 437/195, 148/DIG. 140
• US Class Current: 438/624
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76831 in via holes or trenches, e.g. non-conductive sidewall liners
• CPC Class Codes: H01L 21/76867 characterized by methods of formation other than PVD, CVD or deposition from a liquids PVD H01L21/2855; CVD H01L21/28556; deposition from liquids H01L21/288
• CPC Class Codes: H01L 21/76876 for deposition from the gas phase, e.g. CVD
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288

Abstract

A planar interconnect using selective deposition of a refractory metal such as tungsten into oxide channels is disclosed. A layer of silicon dioxide as thick as the desired tungsten interconnect is placed on the surface of a substrate such as an integrated circuit wafer. Thereafter, a layer of silicon nitride about 100 nm thick is formed on the silicon dioxide. Channels are formed in the silicon dioxide by patterning and etching the composite dielectric layers. After the photoresist is removed, silicon or tungsten atoms at 40 KeV are implanted in the silicon dioxide channels, the silicon nitride acting as a mask. Typically, a dosage as high as 1×10¹⁷ cm^-2 is used. The silicon or tungsten implant allows seeding of the tungsten or other refractory metal. The silicon nitride mask is selectively removed by a hot phosphoric acid solution, and a metal film is then selectively deposited to fill the channels in the silicon dioxide layer, which then forms a level of interconnects. The process is repeated to form vias and subsequent levels of interconnects.

Claims

1. A method of forming an interconnect level for VLSI devices, comprising:

forming on a planar surface of a VLSI wafer a first silicon dioxide dielectric layer, said first layer having a planar top surface;

forming a second layer of a second dielectric material on said top surface of said first layer to produce a composite dielectric;

patterning and etching said composite dielectric to produce at least one interconnect channel in said first layer, said channel extending through said second layer, whereby said second layer forms a mask for said channel in said first layer;

implanting silicon in the exposed bottom surface of said silicon dioxide interconnect channel through said mask;

removing said mask;

selectively depositing a refractory metal in said interconnect channel to fill said channel to the level of said planar top surface of said first layer to thereby form a metal interconnect line, said line and said first layer forming a first planar interconnect level.

2. The method of claim 1, wherein the step of patterning and etching produces plural interconnect channels.

3. The method of claim 2, wherein the deposition of said refractory metal fills said plural interconnect channels to form plural interconnect lines.

4. The method of claim 3, wherein said plural interconnect channels are so positioned that adjacent lines of said plural interconnect lines having a metal pitch of less than about two microns, said interconnect lines having a high resistance to electromigration.

5. The method of claim 1, wherein said first layer is formed by low pressure chemical vapor deposition of silicon dioxide on said wafer, said first layer having a thickness equal to or slightly greater than the thickness of said interconnect line.

6. The method of claim 5, wherein said second layer is formed by the deposition of silicon nitride on the top surface of said first layer to a thickness of about 100 nm.

7. The method of claim 6, wherein said composite dielectric is etched in a reactive ion etcher to form said at least one interconnect channel.

8. The method of claim 6, wherein said silicon is implanted at an energy of about 40 KeV to produce a silicon dosage of about 1×

10¹⁷ cm^-2 in the bottom of said at least one channel.

9. The method of claim 1, further including depositing a third silicon dioxide dielectric layer on the top surface of said first planar interconnect level and forming therein at least one metal-filled via hole to produce a second planar interconnect level.

10. The method of claim 9, wherein the step of forming a via in said third dielectric layer comprises:

forming on the top surface of said third layer a fourth layer of said second dielectric material to form a second composite dielectric;

patterning and etching said second composite dielectric to produce at least one channel in said third and fourth layers to expose the top surface of said first interconnect level;

removing said fourth layer;

implanting silicon in the exposed surface of said first interconnect level through said channel in said third layer; and

selectively depositing a refractory metal to completely fill said channel in said third layer to form a connector and to produce a second planar interconnect level.

11. The method of claim 10, further including forming additional planar interconnect levels having interconnect lines and vias for said VLSI device.