Vertical depletion-mode j-MOSFET

• US 4,746,960 A
• Filed: 07/27/1987
• Issued: 05/24/1988
• Est. Priority Date: 07/27/1987
• Status: Expired due to Fees

• Current Assignee: General Motors Corporation (General Motors Company)
• Original Assignee: General Motors Corporation (General Motors Company)
• Inventors: Jain, Kailash C., MacIver, Bernard A., Valeri, Stephen J.
• Primary Examiner(s): Laroche, Eugene R.
• Assistant Examiner(s): Shingleton, Michael B.
• Application Number:
  US07/077,742
• Time in Patent Office: 302 Days
• Field of Search: 357/22 E, 357/23.4, 357/23.7
• US Class Current: 257/260
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/7838 without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
• CPC Class Codes: H01L 29/78612 for preventing the kink- or the snapback effect, e.g. discharging the minority carriers of the channel region for preventing bipolar effect
• CPC Class Codes: H01L 29/78642 Vertical transistors

Abstract

A vertical j-MOSFET useful as a power transistor includes a two-dimensional array of square cells in which a small fraction of the cells are replaced by a double-junction sink useful for collecting the minority carriers in the channel regions that normally will accumulate at each interface of the gate electrode and channel region.

Claims

1. A vertical j-MOSFET transistor comprising a plurality of cells connected in parallel between a common drain electrode and a common source electrode, the cells being aligned in a two-dimensional regular array except at localized sites spaced apart in the array, and means at each such site for serving as a sink and for collecting minority charge carriers which tend to build up at each interface of a channel region and gate electrode of the transistor when a voltage is applied to the gate electrode for depleting the channel region of majority charge carriers.

2. The vertical transistor of claim 1 in which the means for serving as a sink include an inner zone of the conductivity type of the channel regions that is surrounded by an annular zone of the conductivity type opposite that of the channel region.

3. The vertical transistor of claim 1 in which each means for serving as a sink occupies a plurality of the array sites.

4. The vertical transistor of claim 1 in which each cell is square and occupies a unit area in the array and each means for serving as a sink is square and occupies four unit areas in the array.

5. The vertical transistor of claim 4 in which each means for serving as a sink includes an inner zone of the conductivity type of the channel regions and is surrounded by an annular zone of the conductivity type opposite that of the channel, and means are included for maintaining the inner zone at the voltage of the gate electrode.

6. The vertical transistor of claim 1 which further includes a buried oxide layer which is apertured and which divides the channel between the source and drain electrodes into a plurality of segments and the gate electrode of the transistor includes a plurality of segments.

7. A vertical j-MOSFET which comprises a semiconductor chip which includes a patterned buried insulator layer which divides the chip into a front portion and a back portion and a plurality of channel portions extending between the front and back portions through openings in the buried insulator layer, a gate electrode on said front surface and insulated therefrom, and divided into a plurality of segments for controlling the channel portions, the outer surface of the front portion including a segmented first current-carrying electrode and the outer surface of the back portion including a second current-carrying electrode, and means for collecting minority charge carriers that tend to build up at the interface of each channel portion with its segment of the gate electrode, characterized in that:

the chip is divided into a plurality of sites by the first current-carrying electrode, the patterned insulator layer, and the segmented gate electrode, the sites being arranged in a periodic two-dimensional array, a majority of the sites being occupied by cells formed by the segments of first current-carrying electrode and their associated current paths, and a minority of the sites being occupied by the means for serving as sinks.

8. The transistor of claim 7 in which each cell is square and occupies a unit site and the means for serving as a sink occupies a plurality of unit sites.

9. The transistor of claim 8 in which the means for serving as a sink includes an inner zone of the conductivity type of the channel portions and a surrounding outer zone of the conductivity type opposite that of the channel portions.