Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition
First Claim
1. An apparatus for depositing material on a substrate, comprising:
- a process chamber;
a plurality of gas sources each providing a gas flow;
manifold means for directing gases selectively from the gas sources to the process chamber, the manifold means having first and second inlets for receiving gases from the gas sources, an outlet to the process chamber in communication with the inlets, and a vent in communication with the inlets; and
inlet valve means within the manifold means and operable for directing the gas flow through the first manifold inlet to the outlet and through the second manifold inlet to the vent and for simultaneously switching the gas flows through the inlets back and forth between the outlet and the vent.
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Accused Products
Abstract
Apparatus for producing a constant flow, constant pressure chemical vapor deposition includes a manifold having inlet valves for simultaneously switching equal flows of reactive and nonreactive gas between a process chamber and a vent chamber. A constant flow through the process chamber during a deposition is maintained by replacing each reactive gas flow with the equal nonreactive gas flow. Substantially equal pressures within each chamber are maintained by the substantially equal flows of gases. Any "dead space" within the manifold downstream of the inlet valves is minimized by use of a radial manifold. The nonreactive gas flows also purge the "dead space" of reactive gas that may linger after its flow is switched to the vent chamber.
468 Citations
15 Claims
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1. An apparatus for depositing material on a substrate, comprising:
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a process chamber; a plurality of gas sources each providing a gas flow; manifold means for directing gases selectively from the gas sources to the process chamber, the manifold means having first and second inlets for receiving gases from the gas sources, an outlet to the process chamber in communication with the inlets, and a vent in communication with the inlets; and inlet valve means within the manifold means and operable for directing the gas flow through the first manifold inlet to the outlet and through the second manifold inlet to the vent and for simultaneously switching the gas flows through the inlets back and forth between the outlet and the vent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An apparatus for depositing material on a substrate, comprising:
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a process chamber; a plurality of gas sources each providing a gas flow; a manifold for directing gases selectively from the gas sources to the reaction chamber, the manifold having a plurality of first and second inlet pairs for receiving gases from the gas sources, an outlet in communication with the inlet pairs, and a vent in communication with the inlet pairs; a valve within the manifold between each inlet pair and the outlet and vent directing the gas flow from one manifold inlet of a pair to the outlet and from the other inlet of the pair to the vent and for simultaneously switching the gas flows back and forth between the outlet and vent to maintain a constant gas flow through the process chamber; and a vent chamber in communication with a vent path; and means for injecting a gas flow into the vent chamber and the process chamber to equalize and maintain constant pressures within the chambers as the gas flows through each inlet of a pair are switched by the valve between the vent to the vent chamber and the outlet to the process chamber.
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Specification