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Sintering aid for lanthanum chromite refractories

  • US 4,749,632 A
  • Filed: 10/23/1986
  • Issued: 06/07/1988
  • Est. Priority Date: 10/23/1986
  • Status: Expired due to Fees
First Claim
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1. A method of forming an electronically conductive, integral layer including lanthanum chromite comprising:

  • depositing a layer including particulate lanthanum chromite containing a minor fraction of a sintering aid which includes a eutectic affording composition of at least two components providing a minor portion of a liquid phase in said layer during the sintering step, said eutectic affording composition having a melting point substantially below the melting point of said lanthanum chromite;

    sintering said layer at a sufficiently high temperature of not more than 1800°

    K. to form and densify an integral layer including lanthanum chromite.

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