Voltage-switching device
First Claim
1. A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor, a capacitor and a resistor connected in series, and a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
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Accused Products
Abstract
In a voltage-switching device for such applications as the control of electron tube grids in the field of radar or telecommunications, the total voltages to be switched are distributed at the terminals of a series-connected array of MOS field-effect transistors, thereby ensuring that each individual transistor is not liable to carry voltages in excess of such values which could result in transistor damage or destruction.
95 Citations
10 Claims
- 1. A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor, a capacitor and a resistor connected in series, and a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
- 2. A voltage-switching element, wherein said voltage-switching element has a first input and a first output connected in parallel through a forward-biased diode, a resistor and a capacitor, a second input connected to the source of an insulated-gate field-effect (MOSFET) power transistor, a second output connected to the drain of said insulated-gate field-effect (MOSFET) power transistor, said first input being connected to the gate of said insulated-gate field-effect (MOSFET) power transistor.
Specification