Signal reading circuit for masked and overlapping linear image sensors

• US 4,754,338 A
• Filed: 11/24/1986
• Issued: 06/28/1988
• Est. Priority Date: 11/22/1985
• Status: Expired due to Term

• Current Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Hideshima, Takahiro
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US06/934,578
• Time in Patent Office: 582 Days
• Field of Search: 358/293, 358/294, 358/213.28, 358/213.16, 250/578
• US Class Current: 358/494
• CPC Class Codes: H04N 1/1934 Combination of arrays
• CPC Class Codes: H04N 1/19505 Scanning picture elements spaced apart from one another in at least one direction
• CPC Class Codes: H04N 1/1951 in one direction
• CPC Class Codes: H04N 25/701 Line sensors
• CPC Class Codes: H04N 25/7013 using abutted sensors forming a long line

Abstract

A reading out circuit for a series of linear image sensors having end light elements masked and being arranged in a staggered line. The data is written in parallel into a series of multi-location storage elements, beginning with the masked light element being stored in a central location. The storing is then wrapped around so that the masked value is overwritten.

Claims

1. A signal reading circuit for linear image sensors, comprising:

a linear image sensor unit including a plurality of linear image sensors at different locations transverse to a main scanning direction of said linear image sensors, each linear image sensor having a plurality of photoelements arranged along said main scanning direction, and an opaque metalization mask covering at least one photoelement at a first end of said each linear image sensor;

a plurality of A/D converters in an A/D conversion unit digitizing in parallel outputs of said linear image sensors;

a line memory comprising a plurality of storage elements receiving respective outputs of said A/D converters, each of said storage elements having a number of sequentially arranged storage elements of a number not less than an effective number of photoelements of a corresponding one of said linear image sensors, said effective number being no more than the number of photoelements being not covered by said opaque metalization mask;

means for sequentially writing in parallel into said storage elements output signals of said A/D converters, said sequential writing being of data derived from respective ones of said linear image sensors beginning at said first ends thereof, said sequential writing being performed into sequential ones of said storage locations beginning at an intermediate storage location of each of said storage elements, proceeding to first ends of said storage elements and continuing from a second end of said storage elements.

2. A signal reading circuit as recited in claim 1, further comprising:

means for sequentially reading out said storage elements.

3. A signal reading circuit as recited in claim 2, wherein said sequential reading means reads out said storage elements starting with said second ends.

4. A signal reading circuit as recited in claim 2, wherein there are two such line memories and further comprising means for alternating reading and writing of said two line memories.

5. A signal reading circuit as recited in claim 2, wherein said reading means reads out in one sequence said plurality of storage element.

6. A process for reading out signals from a plurality of linear image sensors, each of said linear image sensors having a plurality of photoelements arranged in a scanning direction, an opaque metalization mask covering at least one photoelement at a first end of each of said sensors, comprising the steps of:

A/D converting in parallel outputs of respective ones of said linear image sensors, said A/D converting being done sequentially from said first ends of said linear image sensors;

writing the parallel products of said A/D converting into sequential locations of a plurality of storage elements each storage element having a number of sequentially arranged storage locations, said writing being sequentially performed beginning with intermediate storage locations of said storage elements, proceeding to first ends of said storage elements and then continuing from second ends of said storage elements, said number of storage locations being no more than an effective number of photoelements of a corresponding one of said linear image sensors, said effective number being no more than the number of photoelements being not covered by said opaque metalization mask.