Method of making light-emitting diodes

• US 4,755,485 A
• Filed: 09/18/1987
• Issued: 07/05/1988
• Est. Priority Date: 05/27/1986
• Status: Expired due to Fees

• Current Assignee: Hewlett-Packard Company (HP Inc.)
• Original Assignee: Hewlett-Packard Company (HP Inc.)
• Inventors: Tsai, Minq-Jonq
• Primary Examiner(s): Ozaki, George T.
• Application Number:
  US07/098,258
• Time in Patent Office: 291 Days
• Field of Search: 437/128, 437/127, 437/126, 437/129, 437/167, 437/905, 372/45, 357/17
• US Class Current: 438/45
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0025 comprising only AIIIBV compounds
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01S 5/20 Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
• CPC Class Codes: H01S 5/2059 by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
• CPC Class Codes: H01S 5/32308 emitting light at a wavelength less than 900 nm

Abstract

A structure and method for use in optical communication systems is provided in which a metal is diffused in a heterojunction region beneath a metal contact of a AlGaAs light emitting diode. This structure and method significantly reduces the contacting shadowing problem due to current crowding beneath the contact thus increasing the light output from the device.

Claims

1. A method of impeding light generation in a region of an active layer of semiconductor material between and defining heterojunctions with base and window layers with band gaps wider than the band gap of said active layer, said window layer being of the same conductivity type as said active layer, said base layer being of the conductivity type opposite to that of said active layer, said method comprising the step of:

diffusing a dopant of the same conductivity type as said active layer through said region and into said base layer so that when light is generated in said active layer, light generation is impeded in the intersection of said dopant region and said active region.

2. The method of claim 1 wherein said dopant is a metal.

3. A method of manufacturing a light emitting diode comprising the steps of:

obtaining a substrate;

forming on said substrate a base layer having a predetermined conductivity type and band gap;

forming on said base layer an active layer having a conductivity type opposite that of said base layer and a band gap narrower than that of said base layer so as to define a first heterojunction;

forming on said active layer a window layer having a band gap wider than that of said active layer so as to define a second heterojunction; and

introducing a dopant of the same conductivity type as that of said active layer in a dopant region extending generally orthogonally through adjacent portions of said window and active layers and at least partially through an adjacent portion of said base layer so that when light is generated in said active layer, light generation is impeded in the intersection of said dopant region and said active region.

4. The method of claim 3 wherein said dopant is introduced by diffusion.

5. The method of claim 3 wherein said dopant is zinc.

6. The method of claim 3 further comprising the step of forming a metal contact adjacent to the common volume of said window layer and said dopant region.

7. The method of claim 3 further comprising the step of applying light-absorbing material adjacent to the common volume of said window layer and said dopant region.

8. A method of impeding light generation in a region of an active layer of semiconductor material between and defining heterojunction with first and second layers with band gaps wider than the band gap of said active layer, said first layer being of AlGaAs and said second layer being of AlGaAS, said second layer being of the same conductivity type as said active layer, said first layer being of the conductivity type opposite to that of said active layer, said method comprising the step of:

diffusing a dopant of the same conductivity type as said active layer through said region and into first layer so that, when light is generated in said active layer, light generation is impeded within said region.

9. A method of manufacturing a light emiting diode comprising the steps of:

obtaining a substrate;

forming on said substrate a first layer of AlGaAs having a predetermined conductivity type and band gap;

forming on said base layer an active layer of AlGaAs having a conductivity type opposite that of said first layer and a band gap narrower than that of said first layer so as to define a first heterojunction;

forming on said active layer a second layer of AlGaAs having a band gap wider than that of said active layer so as to define a second heterojunction; and

introducing a dopant of the same conductivity type as that of said active layer in a dopant region extending generally orthogonally through adjacent portions of said second and active layers and at least partially through an adjacent portion of said first layer so that, when light is generated in said active layer, light generation is impeded in the intersection of said dopant region and said active region.