Switchable microwave oscillator

• US 4,755,772 A
• Filed: 06/05/1987
• Issued: 07/05/1988
• Est. Priority Date: 06/05/1987
• Status: Expired due to Term

• Current Assignee: Avago Technologies Wireless IP Singapore Pte Limited (Broadcom, Inc.)
• Original Assignee: Avantek Inc. (HP Inc.)
• Inventors: Khanna, Amarpal S.
• Primary Examiner(s): Grimm, Siegfried H.
• Application Number:
  US07/058,589
• Time in Patent Office: 396 Days
• Field of Search: 331/109, 331/117 R, 331/117 FE, 331/117 D, 331/173, 331/182, 331/177 V, 332/31 T, 375/66
• US Class Current: 331/109
• CPC Class Codes: H03B 2200/004 including a variable capacitance, e.g. a varicap, a varactor or a variable capacitance of a diode or transistor
• CPC Class Codes: H03B 2201/0208 the means being an element with a variable capacitance, e.g. capacitance diode
• CPC Class Codes: H03B 5/1203 the amplifier being a single transistor
• CPC Class Codes: H03B 5/1228 the amplifier comprising one or more field effect transistors
• CPC Class Codes: H03B 5/1231 the amplifier comprising one or more bipolar transistors
• CPC Class Codes: H03B 5/1243 the means comprising voltage variable capacitance diodes
• CPC Class Codes: H03B 5/1262 the means comprising switched elements
• CPC Class Codes: H03B 5/1852 the semiconductor device being a field-effect device
• CPC Class Codes: H03B 5/1894 the semiconductor device being a field-effect device

Abstract

A switchable microwave oscillator is disclosed that includes a quenching circuit for switching, attenuating, modulating, or otherwise controlling the output amplitude of frequency-stabilized, transistor-based, microwave-frequency oscillators. The quenching circuit includes a diode that is coupled to the transistor at the same port that reactive feedback is present, and includes diode biasing means for selectively applying a bias voltage to the diode. The quenching circuit selectively diverts some of the current flowing through the transistor of the oscillator to control the output thereof.

Claims

1. In a frequency stabilized oscillator having a transistor operable for oscillation in the microwave-frequency range, reactive feedback means coupled to a first port of the transistor for providing sufficient negative resistance to allow the transistor to oscillate, and oscillation-tuning means coupled to a second port of the transistor for stabilizing the oscillation frequency of the oscillator, the improvement comprising:

a quenching circuit coupled to the first port of the transistor and operable for selectively controlling the strength of the output signal of the oscillator, wherein said quenching circuit comprises a diode coupled to the first port of the transistor and diode biasing means for selectively biasing said diode, wherein said diode is operable for reducing the negative resistance of the oscillator when said diode is forward biased.

2. A circuit as recited in claim 1 wherein a first side of said diode is coupled to the transistor, and wherein said diode biasing means includes switching means for selectively coupling a second side of said diode to a first DC voltage source for reverse biasing said diode and to a second DC voltage source for forward biasing said diode.

3. A circuit as recited in claim 2 wherein said diode biasing means further includes a capacitor coupled between the second side of said diode and said second DC voltage source, and includes a resistor and inductor coupled in series between the second side of said diode and said switching means.

4. A circuit as recited in claim 1 wherein said diode biasing means includes means for applying a modulating signal to alternately forward and reverse bias said diode.

5. A circuit as recited in claim 1 wherein said diode biasing means includes means for adjusting the amount of current flowing through said diode when forward biased in order to adjust the amount of negative resistance reduced by said quenching circuit.

6. A circuit as recited in claim 1 wherein said oscillation-tuning means is operable for tuning the output frequency of said oscillator over a frequency band, and wherein said diode biasing means includes means responsive to the oscillation frequency of said oscillator for selectively biasing said diode by an amount that is determined by said oscillation frequency.

7. In a microwave-frequency oscillator having a transistor, transistor biasing means for applying a bias voltage to said transistor, an oscillation-tuning circuit coupled to one port of said transistor, and reactive feedback means coupled to another port of said transistor for generating negative resistance in a desired frequency band to enable said transistor to oscillate at a frequency determined by said oscillation-tuning means, the improvement comprising:

a diode coupled at a first side thereof to the same port of said transistor as said reactive feedback means is coupled and operable for diverting current away from said transistor biasing means; and

diode biasing means for selectively applying a bias voltage to a second side of said diode for controlling the amount of current diverted by said diode.

8. An oscillator as recited in claim 7 wherein said diode biasing means includes switching means for selectively coupling the second side of said diode to a first DC voltage source for reverse biasing said diode and to a second DC voltage source for forward biasing said diode, includes a capacitor coupled between the second side of said diode and said second DC voltage source, and includes a resistor and an inductor coupled in series between the second side of said diode and said switching means.

9. A switchable microwave oscillator comprising:

a transistor capable of oscillation at frequencies in the microwave frequency range;

transistor biasing means for supplying a bias voltage to said transistor;

an oscillation-tuning circuit coupled to a first port of said transistor;

reactive feedback means coupled to a second port of said transistor for providing in combination with said transistor a negative resistance to enable said transistor to oscillate at a frequency determined by said oscillation-tuning circuit;

a diode coupled to the second port of said transistor in parallel with said reactive feedback means; and

diode biasing means for selectively applying a bias voltage to said diode.

10. An oscillator as recited in claim 9 wherein said transistor is a GaAs field-effect transistor, said reactive feedback means includes a capacitor coupled between ground and a source terminal of said transistor, wherein one side of said diode is coupled to the source terminal of said transistor, and wherein said diode biasing means is operable for selectively coupling a second side of said diode to ground to forward bias said diode to stop said oscillator from oscillating and for selectively coupling the second side of said diode to a source of voltage sufficient to reverse bias said diode to allow said oscillator to oscillate.

11. An oscillator as recited in claim 9 wherein said transistor is a bipolar transistor, said reactive feedback means includes a capacitor coupled between ground and an emitter terminal of said transistor, wherein one side of said diode is coupled to the emitter terminal of said transistor, and wherein said diode biasing means is operable for selectively coupling a second side of said diode to ground to forward bias said diode to stop said oscillator from oscillating and for selectively coupling the second side of said diode to a source of voltage sufficient to reverse bias said diode to allow said oscillator to oscillate.

12. An oscillator as recited in claim 9 wherein said oscillation-tuning circuit includes a dielectric resonator.

13. An oscillator as recited in claim 9 wherein said oscillation-tuning circuit includes a YIG tuning element.

14. An oscillator as recited in claim 9 wherein said oscillation-tuning circuit includes a varactor.