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Process for preparing a silicon carbide device

  • US 4,757,028 A
  • Filed: 10/02/1986
  • Issued: 07/12/1988
  • Est. Priority Date: 10/07/1985
  • Status: Expired due to Fees
First Claim
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1. A process for preparing a field effect transistor of silicon carbide, comprising the steps of:

  • (a) depositing a first electrically conductive layer on the surface of a silicon carbide layer;

    (b) partially removing said first electrically conductive layer and exposing a surface of said silicon carbide layer to obtain two spaced apart regions of said first electrically conductive layer, said two spaced apart regions of the first electrically conductive layer constituting a source and a drain electrode of a field effect transistor of silicon carbide to be prepared, the space between said source electrode and said drain electrode defining in said silicon carbide layer a channel region of said field effect transistor;

    (c) forming insulating layers on surfaces of said source electrode, said drain electrode, and said exposed silicon carbide layer, wherein, owing to the differences in the formation rates of said insulating layers, said insulating layers on said exposed silicon carbide layer are thinner than those on said source and drain electrodes;

    (d) depositing a second electrically conductive layer on said insulating layers; and

    (e) partially removing said second electrically conductive layer in a pattern which leaves portions thereof remaining at least above said channel region to provide a gate electrode of said field effect transistor, said gate electrode being insulated from said source and said drain by said insulating layers.

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