Method and means for optical detection of charge density modulation in a semiconductor

• US 4,758,092 A
• Filed: 03/04/1986
• Issued: 07/19/1988
• Est. Priority Date: 03/04/1986
• Status: Expired due to Term

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford Management Co.)
• Original Assignee: Stanford University
• Inventors: Bloom, David M., Heinrich, Harley K.
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): Shingleton, Michael B.
• Application Number:
  US06/836,020
• Time in Patent Office: 868 Days
• Field of Search: 356/364, 356/351, 356/345, 356/350, 356/365, 356/367, 356/433, 324/158 R, 324/158 D, 324/73 R, 372/26, 372/49, 372/92
• US Class Current: 356/364
• CPC Class Codes: G01R 29/14 Measuring field distribution
• CPC Class Codes: G01R 31/308 using non-ionising electromagnetic radiation, e.g. optical radiation investigating or analysing materials by the use of optical means G01N21/00; image analysis G06T7/00

Abstract

Disclosed is a technique for probing dynamic sheet charge density variations in integrated semiconductor devices. Using a specially designed non-invasive Nomarski phase contrast interferometer a sheet charge density sensitivity of 2.6×10⁸ e/cm² / √Hz is extracted from experimental data for 1 mA of detected photocurrent. The charge density sensitivity makes possible μV signal level detection in an active device, and with digital signals the corresponding signal/noise level is sufficiently high that multi-mega-baud data can be captured in real time.

Claims

1. A method of determining charge density in a region of a silicon body comprising the steps of

polarizing a laser beam,

splitting the polarized beam into two orthogonally polarized beams,

applying the two orthogonally polarized beams to the semiconductor body with one beam being directed to said region,

recombining reflections of the two orthogonally polarized beams after passing through the semiconductor body, and

detecting the recombined beam by photodiode means to obtain an intensity modulated signal indicative of differential charge density.

2. The method as defined by claim 1 wherein said step of splitting the polarized beam includes passing the polarized beam through the birefringent beam splitter.

3. The method as defined by claim 2 wherein said step of recombining reflections of the two orthogonally polarized beams includes passing the reflections of the two orthogonally polarized beams through said birefringent beam splitter.

4. A method of determining charge density in a region of a semiconductor body comprising the steps of

polarizing a laser beam,

spatially modulating said laser beam over the surface of a semiconductor body,

obtaining a reflection of said spatially modulated laser beam after passing through said semiconductor body, and

detecting differential relative phase of said reflected wave as indicative of charge density.

5. Apparatus for determining charge density in a region of a semiconductor body comprising

means for producing a laser beam,

polarizer means for receiving said laser beam,

birefringent beam splitter means for splitting said polarized beam into two orthogonally polarized beams,

lens means for applying the two orthogonally polarized beams to the semiconductor body with one beam being directed to said region,

means for directing reflections of the two orthogonally polarized beams after passing through the silicon body back to said birefringent beam splitter thereby combining the two beams, and

means for detecting the recombined beams to obtain an intensity modulated signal indicative of charge density.

6. An optical interconnect comprising

means for generating a laser beam having a fixed wavelength,

a semiconductor body having an active device region adjacent to a major surface and a dielectric layer on said major surface, said dielectric layer having a step in thickness over the active device region, said step being one-quarter of said fixed wavelength,

means for directing a laser beam through said step in said dielectric layer and said active device region,

a single mode optical fiber positioned to receive said beam after passing through said step in said dielectric layer and said semiconductor body and said active device region, and

a photodiode detector for receiving said laser beam as passed by said optical fiber.

7. A method of detecting charge density in an active device region in a semiconductor body comprising

generating a laser beam having a fixed wavelength,

providing first and second etalons in spaced alignment, said spacing being an integral multiple of one-half wavelength of said laser beam,

positioning said semiconductor body between said first and second etalons in axial alignment for axially receiving said laser beam, and providing a

detector means for receiving and detecting said laser beam as passed through one of said etalons.