Method of making light-receiving diode

• US 4,758,525 A
• Filed: 07/14/1986
• Issued: 07/19/1988
• Est. Priority Date: 07/15/1985
• Status: Expired due to Term

• Current Assignee: New Energy and Industrial Technology Development Organizatio
• Original Assignee: Hitachi, Ltd.
• Inventors: Morita, Keiichi, Matsukuma, Kunihiro, Suda, Koichi, Kida, Yasuhiro
• Primary Examiner(s): Ozaki, George T.
• Application Number:
  US06/884,894
• Time in Patent Office: 736 Days
• Field of Search: 29/572, 29/576 B, 29/578, 357/19, 357/30, 147/788, 148/DIG. 83, 148/DIG. 153, 437/143, 437/20, 437/160, 437/2, 437/152, 437/134
• US Class Current: 438/57
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 438/928 Front and rear surface processing
• CPC Class Codes: Y10S 438/965 Shaped junction formation

Abstract

In a method of manufacturing a solar cell including a p-n junction formed in a semiconductor substrate, impurity ions are implanted through a mask in the form of an oxide film covering a light receiving surface of the semiconductor substrate except an electrode forming part, thereby forming a p-n junction which is deep in an area beneath the electrode forming part but shallow in the remaining area. Formation of the shallow p-n junction improves the spectral sensitivity in a short wavelength range. Further, utilization of the oxide film as a passivation film can prevent shortening of the life time of minority carriers in the substrate due to heat treatment, thereby retarding the electron-hole recombination rate at the light receiving surface of the substrate.

Claims

1. A method of manufacturing a light-receiving diode comprising the steps of:

(a) forming on one principal surface, of a pair of principal surfaces of a semiconductor substrate of a first conductivity type, an oxide film having a window at an electrode forming part;

(b) implanting impurity ions of a second conductivity type into said one principal surface through said oxide film;

(c) selectively forming a layer of aluminum on the other principal surface, of the pair of prinicpal surfaces of the semiconductor substrate; and

(d) heat-treating (1) said substrate to activate the implanted ions in the one principal surface, thereby producing an impurity-doped region having a low sheet resistance at said electrode forming part but having a relatively high sheet resistance at the remaining part, and (2) the layer of aluminum on the other principal surface of the substrate to diffuse aluminum into the other principal surface.

2. A method as claimed in claim 1, further comprising the step of depositing an electrode on said impurity-doped region through the window of said oxide film formed in said step (a).

3. A method as claimed in claim 1, wherein the aluminum is diffused into the other principal surface so as to produce a region of the first conductivity type in the substrate having a higher impurity concentration than that of said substrate.

4. A method as claimed in claim 1, wherein said heat-treating sid substrate and said heat-treating the layer of aluminum is performed in a signle step, whereby the activation of the implanted ions in the one principal surface and the diffusion of aluminum into the other principal surface are performed simultaneously.

5. A method as claimed in claim 1, wherein the selective forming of a layer of aluminum is a selective forming of a layer of aluminum paste, the heat-treating of the layer of aluminum being a heat-treating of the layer of aluminum paste so as to bake the aluminum paste and diffuse aluminum into the other principal surface.

6. A method as claimed in claim 5, wherein said heat-treating said substrate and said heat-treating the layer of aluminum paste is performed in a single step, whereby the activation of the implanted ions in the one principal surface and the diffusion of aluminum into the other principal surface are performed simultaneously.

7. A method as claimed in claim 5, wherein said aluminum paste layer has a window for enhancing contact of an electrode to be formed thereafter.

8. A method as claimed in claim 7, further comprising the step of forming a pattern of silver paste on the other principal surface of the heat-treated substrate.

9. A method as claimed in claim 1, wherein said oxide film is retained on said semiconductor substrate during the heat-treating, the oxide film acting as a passivation film.

10. A method as claimed in claim 9, wherein said oxide film has a thickness of about 100 Å

.

11. A method as claimed in claim 1, wherein said heat-treating step includes conveying the substrate on a belt through a furnace.

12. A method of manufacturing a light-receiving diode comprising the steps of:

(a) forming, on one principal surface of a pair of principal surfaces of a semiconductor substrate of a first conductivity type, an oxide film having a window at an electrode forming part;

(b) implanting impurity ions of a second conductivity type into said one principal surface through said oxide film;

(c) selectively forming a layer of aluminum on the other principal surface of the pair of principal surfaces; and

(d) heat-treating said substrate to activate the implanted ions, thereby forming a pn-junction which is deep beneath said electrode forming part but shallow beneath the remaining part, and to diffuse aluminum into the other principal surface.

13. A method as claimed in claim 12, further comprising the step of depositing an electrode on said impurity-doped region through the window of said oxide film formed in said step (a).

14. A method as claimed in claim 12, wherein the layer of aluminum is a layer of aluminum paste.

15. A method as claimed in claim 14, wherein the heat-treating is a single step, whereby the activation of the implanted ions and diffusion of aluminum are performed simultaneously.

16. A method of manufacturing a light-receiving diode comprising the steps of:

(a) forming, on one principal surface of a pair of principal surfaces of a semiconductor substrate of a first conductivity type, a film having a window at an electrode forming part and exerting a retarting action to implanting ions;

(b) implanting impurity ions of a second conductivity type into said one principal surface through said film;

(c) selectively forming a layer of aluminum on the other principal surface of the pair of principal surfaces; and

(d) heat-treating said substrate to activate the ions implanted into said one principal surface, thereby producing an impurity-doped region having a lower sheet resistance and a deeper depth at said electrode forming part than at the remaining part, and to diffuse aluminum to form an aluminum-doped region in the other principal surface.

17. A method as claimed in claim 16, wherein the layer of aluminum is a layer of aluminum paste.

18. A method as claimed in claim 17, wherein the heat-treating is a single step, whereby the activation of the implanted ions and diffusion of aluminum are performed simultaneously.