Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity

• US 4,760,285 A
• Filed: 03/30/1987
• Issued: 07/26/1988
• Est. Priority Date: 03/30/1987
• Status: Expired due to Term

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Nelson, Richard W.
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/032,114
• Time in Patent Office: 484 Days
• Field of Search: 307/309, 324/251, 324/117 H, 357/27, 357/28, 323/368, 323/294
• US Class Current: 327/511
• CPC Class Codes: H03K 17/14 Modifications for compensating variations of physical values, e.g. of temperature
• CPC Class Codes: H03K 17/90 by the use, as active elements, of galvano-magnetic devices, e.g. Hall-effect devices H03K17/95, H03K17/97 take precedence
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

A linear Hall effect integrated circuit in which the output signal of a Hall element formed in an epitaxial layer is amplified by an amplifier circuit whose gain is determined by a resistor partially formed in the same epitaxial layer. A first amplifier stage configured as a voltage to current converter is connected through a current mirror to a second amplifier stage configured as a current to voltage converter. The current bias for the first amplifier stage is controlled by a resistor also partially formed in the epitaxial layer.

Claims

1. A temperature compensated integrated circuit Hall effect device comprising:

a substrate having an epitaxial layer thereon;

a Hall effect element formed in said epitaxial layer, said Hall effect element having first and second output terminals between which is produced a voltage difference indicative of the magnitude of an applied magnetic field; and

amplifier means connected to the first and second output terminals of said Hall effect element for receiving a voltage difference produced in response to a magnetic field and producing an output voltage whose magnitude is substantially linearly related to the magnitude of the magnetic field over an extended temperature range, said amplifier means including resistor means having a first resistive portion formed in the epitaxial layer and a second resistive portion having a constant temperature coefficient.

2. The Hall effect device of claim 1 wherein said resistor means includes a first gain control resistor comprising the first and second resistive portions;

and

the resistance of the second resistive portion is a predetermined fraction of the resistance of the first resistive portion.

3. The Hall effect device of claim 2 wherein:

said amplifier means includes a first amplifier stage having first and second ideally identical amplifiers each with an input terminal and an output terminal, the input terminals of said first and second amplifiers being connected to the first and second output terminals respectively of said Hall effect element, said amplifier means further including a second amplifier stage comprising a differential amplifier with first and second input terminals and an output terminal, and interstage transfer means connecting the output terminals of the first amplifier stage to the input terminals of the second amplifier stage; and

the first gain control resistor determines the transresistance of said second amplifier stage.

4. The Hall effect device of claim 3 wherein said resistor means further includes a bias resistor comprising a third resistive portion formed in the epitaxial layer and a fourth resistive portion with a constant temperature coefficient, the bias resistor being connected in the first amplifier stage so as to cause the bias currents for said first and second ideally identical amplifiers to track the responsivity of said Hall effect element to applied magnetic fields.

5. The Hall effect device of claim 4 wherein said second and fourth resistive portions are thin film chromium silicon resistors connected in series with the first and third resistive portions respectively.

6. The Hall effect device of claim 5 wherein:

said first amplifier stage is configured to operate as a voltage to current converter;

said second amplifier stage is configured to operate as a current to voltage converter; and

said interstage transfer means comprises current mirror means.

7. The Hall effect device of claim 6 further including a second gain control resistor connected between said first and second ideally identical amplifiers, said second gain control resistor being operable to determine the transconductance of said first amplifier stage.

8. The Hall effect device of claim 7 wherein said first amplifier stage includes:

an input transistor in each of said first and second ideally identical amplifiers, the base electrodes of the input transistors forming the input terminals of said first amplifier stage;

input offset adjustment means for permitting the current densities at input transistor base-emitter junctions in said first and second amplifiers to be adjusted without unbalancing the output differential of the first and second amplifiers; and

output offset adjustment means for permitting the current through the first and second resistive portions of the first gain control resistor to be adjusted to zero with zero magnetic field applied to said Hall effect element.

9. The Hall effect device of claim 8 wherein said second amplifier stage includes null adjustment means for setting the output voltage of said second amplifier stage to a desired value with zero magnetic field applied to said Hall effect element.

10. The Hall effect device of claim 9 wherein:

voltage supply and reference voltage conductors are included;

said first and second ideally identical amplifiers include cross-coupled current control means; and

said input offset adjustment means comprises variable resistor means connected between said voltage supply conductor and the current control means in said first and second amplifiers.

11. The Hall effect device of claim 10 wherein said output offset adjustment means comprises variable resistor means connecting said first and second ideally identical amplifiers to said voltage reference conductor for adjusting the difference in output currents produced by said first amplifier stage.

12. The Hall effect device of claim 11 wherein the third and fourth resistive portions of said bias resistor are connected in series, the series connected third and fourth resistive portions connecting said first and second amplifiers to said reference voltage conductor.

13. A temperature compensated integrated circuit Hall effect device having a voltage supply terminal, a reference voltage terminal and an output terminal, the Hall effect device comprising:

a substrate having an epitaxial layer thereon;

a Hall effect element formed in said epitaxial layer, said Hall effect element being operable to produce a voltage difference between first and second terminals thereof when an electric current is caused to flow between third and fourth terminals thereof and said element is subjected to a magnetic field;

a voltage supply conductor connected to the voltage supply terminal;

a reference voltage conductor connected to the reference voltage terminal;

first and second ideally identical amplifiers, each having first and second input terminals, an input offset adjustment terminal, a temperature tracking bias terminal and output terminal means, the first input terminals of the first and second amplifiers being connected to the first and second terminals respectively of said Hall effect element, the input offset adjustment terminals of said first and second amplifiers being connected to said voltage supply conductor through first and second input offset adjustment circuits respectively, the temperature tracking bias terminals of said first and second amplifiers being connected to said reference voltage conductor through bias resistor means including a first resistive portion formed in the epitaxial layer on said substrate, and the output terminal means of said first and second amplifiers being connected to said reference voltage conductor through output offset adjustment means including output offset adjustment resistors;

a first gain control resistor connected between the second input terminals of said first and second amplifiers;

a third amplifier having first and second input terminals, a null adjustment terminal, and an output terminal connected to the output terminal of the Hall effect device, the null adjustment terminal being connected to said voltage supply conductor and said reference voltage conductor through a voltage divider;

a second gain control resistor connected between the first and second input terminals of said third amplifier, said second gain control resistor including a first resistive portion formed in the epitaxial layer on said substrate; and

first and second current mirrors connecting the output terminal means of said first and second amplifiers to the first and second input terminals of said third amplifier respectively.

14. The Hall effect device of claim 13 wherein the bias resistor means includes a second resistive portion having a constant temperature coefficient connected in series with the first resistive portion formed in the epitaxial layer;

and

the second gain control resistor means includes a second variable resistive portion connected in series with the first resistive portion formed in the epitaxial layer.

15. The Hall effect device of claim 14 wherein the first and second input offset adjustment circuits, the bias and output offset adjustment resistors associated with said first and second amplifiers and said second gain control resistor means include thin film chromium silicon resistors.

16. The Hall effect device of claim 15 wherein said third ampifier includes fault protection means for bringing the voltage at the output terminal of the Hall effect device within a predetermined range of the voltage supplied to the voltage supply terminal or the reference voltage terminal from an external source in the event of an electrical discontinuity in the connection between the voltage supply or reference voltage terminal and the external source of the supply or reference voltage respectively.