Combined bipolar and MOSFET switch

• US 4,760,293 A
• Filed: 05/12/1986
• Issued: 07/26/1988
• Est. Priority Date: 11/04/1982
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Hebenstreit, Ernst
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): Bertelson, David R.
• Application Number:
  US06/863,811
• Time in Patent Office: 806 Days
• Field of Search: 307/570, 307/270, 307/446, 307/449, 307/242, 307/544, 307/546-549, 307/554, 307/558, 307/559, 307/603, 307/605, 307/606, 307/314, 307/315, 307/566
• US Class Current: 327/432
• CPC Class Codes: H03K 17/08122 in field-effect transistor switches
• CPC Class Codes: H03K 17/08142 in field-effect transistor switches
• CPC Class Codes: H03K 17/107 in composite switches
• CPC Class Codes: H03K 17/567 Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT

Abstract

Power MOSFETs for switching high voltages have a relatively high on-state DC resistance. The invention provides for the connection in series of a low voltage MOSFET with a higher voltage bipolar transistor. This series circuit is connected in parallel with a series circuit consisting of another MOSFET and a threshold switch. The threshold switch is placed between the base terminal and the free terminal of the low voltage MOSFET. The MOSFETs receive a joint control signal (u₁) which is routed to the low voltage MOSFET. In the case of an inductive load with recovery operation, the signal is routed through a delay element that becomes active when the circuit is turned on.

Claims

1. An electronic switch, comprising:

(a) a bipolar transistor having collector, emitter and base terminals, one of said collector and emitter terminals being connectable through a load to a voltage source;

(b) a first MOSFET transistor having source, drain and gate terminals, one of said source and drain terminals thereof being connected to the other of said emitter and collector terminals of said bipolar transistor;

(c) a second MOSFET transistor having source, drain and gate terminals, one of said source and drain terminals thereof being connectable through said load to said voltage source;

(d) a threshold element having at least two terminals, one of said two terminals being connected to the other of said source and drain terminals of said second MOSFET transistor and the other of said two terminals being connected to the other of said source and drain terminals of said first MOSFET transistor;

the threshold element for defining a threshold voltage for operating the bipolar transistor;

(e) input means connected to said gate terminals of said first and second MOSFET transistors for coupling a control signal to said gate terminals of said first and second MOSFET transistors; and

(f) means connecting said one terminal of said threshold element to said base terminal of said bipolar transistor.

2. Switch according to claim 1, wherein said threshold element comprises at least one diode connected in series.

3. Switch according to claim 1, wherein said threshold element is a Zener diode.

4. Switch according to any one of claims 1 to 3, wherein:

(a) said switch further comprises a delay element; and

(b) said control signal is routed to said second MOSFET and is routed to said first MOSFET through said delay element, said delay element being effective in the presence of said control signal and being responsive to the same polarity that causes said first MOSFET to conduct.

5. Switch according to claim 4, wherein said delay element is a resistor with a diode connected in parallel.

6. Switch according to any one of claims 1 to 3, wherein said input means further comprises a separate master clock connected to the gate terminal of said first MOSFET transistor, the separate master clock for supplying a separate control signal to such gate terminal which is a time delayed version of the control signal applied to the gate terminal of said second MOSFET transistor.

7. In an electronic switch having a first MOSFET and at least one bipolar transistor, in which the collector-emitter section of the bipolar transistor and the drain-source section of the first MOSFET are connected in series to form a first series circuit, the improvement comprised in that:

(a) said bipolar transistor is a Darlington amplifier comprising an input and an output bipolar transistor and the drain-source section of the first MOSFET is connected in series to the collector-emitter section of the output bipolar transistor of said Darlington amplifier;

(b) a second series circuit comprising a second MOSFET and a threshold element is connected in parallel with the first series circuit of said bipolar transistor and said first MOSFET, said first and second series circuits being connectable in parallel through a load to a source of voltage;

(c) said threshold element is connected between first MOSFET that is not connected to the output bipolar transistor; and

(d) a control signal is routed to the gate terminals of said first MOSFET and said second MOSFET.

8. Switch according to claim 7, wherein:

(a) said switch further comprises a delay element; and

(b) said control signal is connected to said second MOSFET and connected to said first MOSFET through said delay element, said delay element being effective in the presence of said control signal and being responsive to the same polarity that causes said first MOSFET to conduct.

9. A switching circuit for an inductive load energized from a d-c source, said switching circuit comprising:

a bipolar transistor having first and second power electrodes and a control electrode;

a first field effect transistor (FET) having first and second power electrodes and a gate electrode;

means for connecting the power electrodes of the bipolar transistor and the first FET serially with the load cross the d-c source;

a second FET having first and second power electrodes and a gate electrode, said first and second power electrodes being connected between the first power electrode and the control electrode of the bipolar transistor;

gate drive means connected to the gate electrodes of both FETs and providing rectangular voltage pulses thereto, the FETs being in a conductive stage during the existence of any positive rectangular pulse whereby load current passes through the load, the bipolar transistor and the first FET, the second FET applying a control signal to the control electrode of the bipolar transistor.

10. The switching circuit of claim 9 and including a voltage breakdown device connected between the control electrode of the bipolar transistor and the d-c source, the voltage breakdown device being poled to block current flow away from the control electrode of the bipolar transistor until a predetermined voltage is applied to the breakdown device.

11. The circuit of claim 10 wherein the voltage breakdown device is a zener diode.

12. The circuit of claim 9 and including a diode connected across the load and poled to pass current away from the bipolar transistor.

13. A switching circuit for an inductive load energized from a d-c source and comprising:

a bipolar transistor having collector base and emitter electrodes, the collector electrode connected to a first polarity of the d-c source by means of the inductive load;

a first switch connected between the emitter electrode of the bipolar transistor and a second polarity of the d-c source;

a second switch connected between the inductive load and the base electrode of the bipolar transistor;

means for simultaneously closing or opening said first and second switches in accordance with current requirements of the load, the closing of the first switch providing a load current path from the emitter of the bipolar transistor to the second polarity of the d-c source, the closing of said second switch providing current to the base electrode of the bipolar transistor causing it to switch on, the opening of said switches establishing an emitter open condition on the bipolar transistor and elimination of its base current drive to render it non-conducting.

14. The circuit of claim 13 and including bypass means for passing current from the base electrode of the bipolar transistor to the second polarity of the d-c source when the collector-base voltage exceeds a predetermined value.

15. The circuit of claim 14 wherein the bypass means is a voltage breakdown means connected between the gate electrode of the bipolar transistor and the second polarity of the d-c source.

16. The circuit of claim 13 wherein said first switch is a FET having a source electrode connected to the emitter electrode of the bipolar transistor, a drain electrode to the second polarity of the d-c source and a gate electrode connected to the means for simultaneously opening or closing said first and second switches.

17. The circuit of claim 13 wherein said second switch is a FET having a source electrode connected to the load, a drain electrode connected to the base electrode of the bipolar transistor and a gate electrode connected to the means for simultaneously opening or closing said first and second switches.