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Method for fabricating a semiconductor contact and interconnect structure using orientation dependent etching and thermomigration

  • US 4,761,681 A
  • Filed: 09/08/1982
  • Issued: 08/02/1988
  • Est. Priority Date: 09/08/1982
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a substrate of semiconductor material having first and second major surfaces;

    at least one mesa of semiconductor material integral with the semiconductor material of said substrate and extending outwardly of said first major surface of said substrate to define a substantially level elevated surface spaced outwardly with respect to said first major surface of said substrate;

    an electrically conductive material forming an electrically conductive path through said substrate and extending to said first and second major surfaces and through said at least one mesa to said level elevated surface thereof so as to define a continuous electrical conductor;

    a first electrically conductive layer disposed on said level elevated surface of said mesa and electrically interconnected to said electrical conductor defined by said electrically conductive path through said substrate;

    a second electrically conductive layer disposed on said second major surface of said substrate electrically interconnected to said electrical conductor as defined by said electrically conductive path through said substrate; and

    first and second electrical circuit means respectively disposed on said first and second major surfaces of said substrate and electrically connected to said first and second electrically conductive layers respectively so as to be electrically interconnected with each other via said electrical conductor as defined by said electrically conductive path through said substrate.

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