Process for producing a SiC semiconductor device

• US 4,762,806 A
• Filed: 12/19/1984
• Issued: 08/09/1988
• Est. Priority Date: 12/23/1983
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Suzuki, Akira, Furukawa, Katsuki
• Primary Examiner(s): Chaudhuri, Olik
• Application Number:
  US06/683,801
• Time in Patent Office: 1,329 Days
• Field of Search: 357/16, 357/61, 148/DIG. 148, 437/100, 437/911
• US Class Current: 438/186
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02447 Silicon carbide
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/02576 N-type
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/66068 the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
• CPC Class Codes: Y10S 438/931 Silicon carbide semiconductor

Abstract

A process for producing a SiC semiconductor device comprising growing a single-crystal film of SiC on a single-crystal substrate of Si and forming the structure of semiconductor device such as diodes, transistors, etc., on said SiC single-crystal film, thereby obtaining a SiC semiconductor device on a commercial scale.

Claims

1. A process for producing a junction gate field effect transistor, comprising the steps of:

growing a first single-crystal film of SiC of one conductivity type on a single-crystal silicon substrate of said one conductivity type;

forming a second single-crystal SiC film of the opposite conductivity type on said first film;

forming a third single-crystal SiC film of said one conductivity type on said second film;

etching said third film so that only a mesa shaped portion of said third film remains on a central portion of said second film;

forming an ohmic gate electrode on the upper surface of said mesa; and

forming respective ohmic source and drain electrodes on the surface of said second film with said mesa being disposed between said source and drain electrodes.

2. A process for producing a junction gate field effect transistor as defined in claim 1 wherein said one type of conductivity is p-type.

3. A process for producing a junction gate field effect transistor as defined in claim 1 wherein said step of forming an ohmic gate electrode and said step of forming respective ohmic source and drain electrodes include vapor depositing metal onto the respective surfaces of said third and said second films respectively.

4. A process for producing a junction gate field effect transistor as defined in claim 3 wherein said source and drain electrodes are formed of nickel and said gate electrode is formed of an aluminum-silicon alloy.

5. A process for producing a junction gate field effect transistor as defined in claim 1 wherein said SiC single-crystal films are grown on said Si single-crystal substrate by the chemical vapor deposition method.

6. A process for producing a junction gate field effect transistor as defined in claim 5 wherein during said vapor deposition method, a mixture of monosilane gas and propane gas is supplied as a source gas to the surface of said Si single-crystal substrate with hydrogen gas as a carier gas.

7. The process for producing a junction gate field effect transistor according to claim 1, including a step for forming a back electrode on said single-crystal substrate of Si.