Chemical-sensitive semiconductor device

• US 4,764,797 A
• Filed: 07/08/1986
• Issued: 08/16/1988
• Est. Priority Date: 09/14/1985
• Status: Expired due to Fees

• Current Assignee: Thorn EMI Plc (Universal Music Group NV)
• Original Assignee: Thorn EMI Plc (Universal Music Group NV)
• Inventors: Sibbald, Alastair, Shaw, John E. A.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Crane, Sara W.
• Application Number:
  US06/883,158
• Time in Patent Office: 770 Days
• Field of Search: 357/25, 357/55, 357/23.5
• US Class Current: 257/253
• CPC Class Codes: G01N 27/414 Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Abstract

A chemical-sensitive semiconductor device in the form of a chemical-sensitive field effect transistor, suitable for testing relatively small volumes of a fluid analyte, comprises a substrate provided with a passageway, interconnecting its major surfaces, along which the analyte can pass. Drain and source regions are formed at opposite ends of the passageway and a chemical-sensitive gate region is formed on the sides of the passageway.

Claims

1. A chemical-sensitive semiconductor device comprising a substrate of a semiconductor material, a passageway interconnecting major surfaces of the substrate along which a sample under test may pass and a chemical-sensitive gate region formed on a wall of the passageway and wherein said passageway is tapered.

2. A device according to claim 1 wherein said passageway is in the form of a truncated, square-based pyramid.

3. A device according to claim 1 or claim 2 in the form of a chemical-sensitive field effect transistor having a drain region and a source region.

4. A device according to claim 3 wherein the drain region and the source region are at opposite ends of the passageway.

5. A device according to claim 3 wherein the drain and source regions of the transistor are of one polarity type and one of the drain region and the source region is formed in an epitaxial layer of the opposite polarity type.

6. A device according to claim 3 wherein the drain and source regions of the transistor are remote from the chemical-sensitive gate region and are coupled thereto by an extended gate conductor.

7. A device according to claim 1 including a first field effect transistor having a first said tapered passageway provided with a first chemical-sensitive gate region and a second field effect transistor having a second said tapered passageway provided with a second chemical-sensitive gate region, wherein one only of the first and second chemical-sensitive gate regions is sensitive to a particular analyte and both of the gate regions have substantially the same sensitivity to the influence of light and temperature, the first and second field effect transistors being coupled together to be capable of producing an output signal representing said particular analyte only.

8. A device according to claim 1 or claim 2 in the form of a chemical-sensitive gate controlled diode.

9. A device according to claim 1 including a duct arranged to convey analyte to, and away from, said passageway.

10. A device according to claim 3 including a reference electrode mounted in a wall of said duct.

11. A device according to claim 9 wherein said chemical-sensitive gate region includes a layer of a chemical-sensitive material, said material being deposited also on an inner surface of the duct.

12. A device according to claim 10 or claim 11 wherein said reference electrode includes a porous plug which, in use, is exposed to analyte passing along said duct.