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Recrystallized CMOS with different crystal planes

  • US 4,768,076 A
  • Filed: 09/11/1985
  • Issued: 08/30/1988
  • Est. Priority Date: 09/14/1984
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate which has a first substantially flat surface lying substantially parallel to a (100) plane;

    an insulating film formed on said first substantially flat surface;

    a semiconductor layer, which is deposited on said insulating film and recrystallized by laser irradiation, and which has a second substantially flat surface lying substantially parallel to a (110) plane; and

    source and drain regions of a n-channel MOS transistor formed at said first substantially flat surface of said semiconductor substrate, and source and drain regions of a p-channel MOS transistor formed at said second substantially flat surface of said semiconductor layer.

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