Device having strain induced region of altered bandgap
First Claim
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1. A device comprising a substrate and disposed thereon a first cladding layer, an interleaved region of alternating first and second compositions comprising Gex Si1-x and Gey Si1-y, respectively, x greater than y and less than or equal to 1.0, having different lattice constants and a lattice mismatch, said mismatch being accommodated by strain thereby changing the bandgap from that of the bulk compositions and at least one of said x and y being selected to yield the strain induced bandgap.
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Abstract
A strained layer superlattice comprising Gex Si1-x layers interleaved with Si layers is an excellent photodetector at infrared wavelengths due to the large shift in bandgap caused by the strain in the superlattice.
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20 Claims
- 1. A device comprising a substrate and disposed thereon a first cladding layer, an interleaved region of alternating first and second compositions comprising Gex Si1-x and Gey Si1-y, respectively, x greater than y and less than or equal to 1.0, having different lattice constants and a lattice mismatch, said mismatch being accommodated by strain thereby changing the bandgap from that of the bulk compositions and at least one of said x and y being selected to yield the strain induced bandgap.
- 11. A device comprising a substrate and disposed thereon a first layer comprising Gex Si1-x, x greater than 0.0 and less thanor equal to 1.0, having a different lattice constant than said substrate and a lattice mismatch, said mismatch being accommodated by strain thereby changing the bandgap from that of the bulk composition and said x being selected to yield the strain induced bandgap.
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