Thin film FET doped with diffusion inhibitor
First Claim
1. A semiconductor device having a MOS transistor element which is formed with a source region, a drain region and a channel region in a polycrystalline silicon layer on a semiconductor body, characterized in that said source region, drain region and channel region are all formed of polycrystalline silicon, that a conductive impurity is contained in said source region and drain region, and that at least one species of ions selected from the group consisting of oxygen, nitrogen and carbon ions are contained in said source region, drain region and channel region in order to restrain said conductive impurity from diffusing into said channel region.
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Abstract
The present invention relates to a semiconductor device including a MOS transistor which is formed with a source region, a drain region and a channel region by the use of polycrystalline silicon, and a method of manufacturing the semiconductor device. Ions of carbon, oxygen or/and nitrogen are introduced into a polycrystalline silicon layer over the whole area thereof, and restrain conductive ions in the source and drain regions from diffusing into the channel region.
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Citations
11 Claims
- 1. A semiconductor device having a MOS transistor element which is formed with a source region, a drain region and a channel region in a polycrystalline silicon layer on a semiconductor body, characterized in that said source region, drain region and channel region are all formed of polycrystalline silicon, that a conductive impurity is contained in said source region and drain region, and that at least one species of ions selected from the group consisting of oxygen, nitrogen and carbon ions are contained in said source region, drain region and channel region in order to restrain said conductive impurity from diffusing into said channel region.
Specification