Flexible photovoltaic device

• US 4,773,942 A
• Filed: 03/03/1986
• Issued: 09/27/1988
• Est. Priority Date: 11/04/1981
• Status: Expired due to Term

• Current Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
• Original Assignee: Kanegafuchi Kagaku Kogyo Kabushiki Kaisha
• Inventors: Tsuge, Kazunori, Hamakawa, Yoshihiro, Tawada, Yoshihisa, Izumina, Masanobu
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/835,717
• Time in Patent Office: 939 Days
• Field of Search: 136/244, 136/245, 136/256, 136/258 PC, 136/258 AM
• US Class Current: 136/244
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/03926 comprising a flexible substrate
• CPC Class Codes: H01L 31/0445 including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
• CPC Class Codes: H01L 31/0504 specially adapted for series or parallel connection of solar cells in a module
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/202 including only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A flexible photovoltaic device includes a flexible substrate and a photovoltaic device body. The flexible substrate is a metal foil or film provided with an electric insulating layer of a material having an electric conductivity of not more than 10^-7 (Ω·cm.)^-1 at the time of light impinging and made of an amorphous silicon nitride containing hydrogen.

Claims

1. A photovoltaic device comprising a substrate including a metal foil and an overlaying electric insulating thin film having an electric conductivity of not more than about 10^-7 (Ω

·

cm.)^-1 during light impingement, and a photovoltaic device body of a non-single-crystal semiconductor, the device body being formed over said electric insulating thin film, and said electric insulating thin film being a layer of amorphous silicon nitride containing hydrogen having a thickness of 0.01-20 μ

m.

2. The device of claim 1, wherein the non-single-crystal semiconductor is an amorphous silicon semiconductor or a multicomponent amorphous semiconductor made of amorphous silicon containing an element selected from the group consisting of C, N, Ge and Sn.

3. The device of claim 1, wherein the non-single-crystal semiconductor is an amorphous semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent amorphous semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.

4. The device of claim 1, wherein the non-single-crystal semiconductor is a microcrystalline silicon semiconductor or a multicomponent microcrystalline semiconductor made of microcrystalline silicon containing an element selected from the group consisting of C, N, Ge and Sn.

5. The device of claim 1, wherein the non-single-crystal semiconductor is a microcrystalline semiconductor made of an element selected from the group consisting of Si, Ge and Sn or a multicomponent microcrystalline semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.

6. The device of claim 1, wherein said non-single-crystal semiconductor includes an amorphous semiconductor layer and a microcrystalline semiconductor layer, said amorphous semiconductor layer being an amorphous Si, Ge or Sn semiconductor or an amorphous multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn, and said microcrystalline semiconductor layer being a microcrystalline Si, Ge or Sn semiconductor or a microcrystalline multicomponent semiconductor made of at least two elements selected from the group consisting of Si, C, N, Ge and Sn.

7. The device of claim 1, wherein said non-single-crystal semiconductors have a three layer structure of a PIN junction type.

8. The device of claim 7, wherein at least one of the P-layer and the N-layer is a multicomponent semiconductor made of a mixture or amorphous or microcrystalline silicon and an element selected from the group consisting of C, N, Ge and Sn.

9. The device of claim 1, wherein said layer of amorphous silicon nitride is prepared by glow discharge decomposition.

10. The device of claim 1, wherein said substrate is provided with a plurality of photovoltaic device bodies on the electric insulating thin film to give a plurality of generating zones, said generating zones being connected in series to each other.

11. A flexible amorphous silicon solar battery for attaching to a curved body portion comprising:

a metal foil as the substrate thereof;

an insulating layer which is amorphous silicon nitride containing hydrogen formed on said metal foil integrally by plasma chemical vapor deposition, the thickness of which is 0.01-20 μ

m;

and at least one amorphous silicon photoelectric conversion portion formed on said insulating layer.