Non-volatile semiconductor memory device
First Claim
1. A non-volatile semiconductor memory device comprising:
- a semiconductor substrate of a first conductivity type;
an impurity buried layer of a second conductivity type, different from said first conductivity type, formed at a surface of said semiconductor substrate, and constituting one of a drain region and a source region of a transistor of said semiconductor memory device;
an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer;
an insulating well extending from a surface of said epitaxial layer to said impurity buried layer, to form an independent vertical channel region coupled to said epitaxial layer;
an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor;
at least two electron accumulating regions formed in said insulating wall, separately facing said independent vertical channel region;
a first insulation film between said electron accumulating regions and said insulating walls, of a thickness to cause an induced tunnel effect; and
at least two control gate electrodes and a second insulation film, said at least two control gate electrodes extending vertically in said insulating wall, and separately facing each of said electron accumulating regions with said second insulation film therebetween, and controlling a conductivity of said independent vertical channel region between said impurity buried layer and said impurity surface region.
1 Assignment
0 Petitions
Accused Products
Abstract
A non-volatile semiconductor memory device comprises a semiconductor substrate of a first conduction type, an impurity buried layer of a second conduction type formed at the surface of the semiconductor substrate for constituting either one of a drain region or a source region, an epitaxial layer of a second conduction type formed at the surface of said impurity buried layer, an insulatiang partition wall extended vertically from the surface of the epitaxial layer surrounding operation regions in the impurity buried layer for defining the operation regions therein, at least one electron holding portion extended vertically with a predetermined distance from the operation regions and disposed within the insulating partition wall apart from the operation region, the impurity buried layer or the drain region by an insulation film of such a thickness as causing a tunnel effect, control gates disposed within the insulation partition wall disposed on every electron holding portions on the side opposite to the operation regions and extended vertically with a certain gap from the electron maintaining portions, and a control gate disposed within the insulating partition wall on every electron holding portions on the opposite side to the operation region extended vertically and with a certain gap to the electron holding portions, and an impurity region of a second conduction type formed at the surface of the operation region for constituting the other of the drain region or the source region.
179 Citations
14 Claims
-
1. A non-volatile semiconductor memory device comprising:
-
a semiconductor substrate of a first conductivity type; an impurity buried layer of a second conductivity type, different from said first conductivity type, formed at a surface of said semiconductor substrate, and constituting one of a drain region and a source region of a transistor of said semiconductor memory device; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating well extending from a surface of said epitaxial layer to said impurity buried layer, to form an independent vertical channel region coupled to said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; at least two electron accumulating regions formed in said insulating wall, separately facing said independent vertical channel region; a first insulation film between said electron accumulating regions and said insulating walls, of a thickness to cause an induced tunnel effect; and at least two control gate electrodes and a second insulation film, said at least two control gate electrodes extending vertically in said insulating wall, and separately facing each of said electron accumulating regions with said second insulation film therebetween, and controlling a conductivity of said independent vertical channel region between said impurity buried layer and said impurity surface region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A non-volatile semiconductor memory device comprising:
-
a semiconductor substrate of a first conductivity type; a impurity buried substrate of a second conductivity type different from said first conductivity type, formed at a surface of said semiconductor substrate, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type, formed at a surface of said independent vertical channel region and constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; a silicon nitride layer formed in said insulating wall, which faces said independent vertical channel region on said silicon oxide film, said silicon oxide film of a thickness to cause an induced tunnel effect; and at least two control gate electrodes extending vertically in said insulating wall, separately facing said independent vertical channel region with said silicon nitride layer therebetween.
-
-
14. A non-volatile semiconductor memory device comprising:
-
a semiconductor substrate of a first conductivity type; a impurity buried layer of a second conductivity type formed at a surface of said semiconductor substrate, different from said first conductivity type, for constituting one of a drain region and a source region of a transistor; an epitaxial layer of said second conductivity type formed at a surface of said impurity buried layer; an insulating wall extending from a surface of said epitaxial layer to said impurity buried layer to form an independent vertical channel region as a part of said epitaxial layer; an impurity surface region of said second conductivity type formed at a surface of said independent vertical channel region, constituting the other of said drain region and said source region of said transistor; a silicon oxide film formed on said independent vertical channel region; at least one electron accumulating region, facing said independent vertical channel region; a first insulation film between said electron accumulating region and said insulating walls, of a thickness to cause an induced tunnel effect; a second insulation film; and at least one control gate electrode extending vertically in said insulating wall, and facing said electron accumulating region with said second insulation film therebetween, and controlling a conductivity between said impurity buried layer and said impurity surface region.
-
Specification