Integrated current sensor configurations for AC motor drives

• US 4,777,579 A
• Filed: 01/04/1988
• Issued: 10/11/1988
• Est. Priority Date: 01/04/1988
• Status: Expired due to Term

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Wildi, Eric J., Jahns, Thomas M.
• Primary Examiner(s): Salce, Patrick R.
• Assistant Examiner(s): STERRETT, JEFFREY L
• Application Number:
  US07/140,686
• Time in Patent Office: 281 Days
• Field of Search: 363/17, 363/25, 363/26, 363/48, 363/132, 363/134
• US Class Current: 363/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H02M 1/0009 Devices or circuits for detecting current in a converter
• CPC Class Codes: H02M 7/5387 in a bridge configuration
• CPC Class Codes: H03K 2217/0027 Measuring means of, e.g. currents through or voltages across the switch

Abstract

An AC polyphase motor drive includes a current-controlled inverter comprising a plurality of semiconductor devices made up of power switches, such as IGBTs, and diodes. Current sensors integral with respective ones of a first group of the semiconductor devices sense the current delivered to each of the motor phase windings and a controller compares the sensed currents to a set of command signals to control operation of a second group of the semiconductor devices.

Claims

1. A building block for an inverter, said inverter including a pair of input buses for receiving a DC input voltage and producing an AC voltage at an AC output terminal thereof, and control means responsive to currents in said building block for supplying control signals thereto, said building block comprising:

a first three-terminal semiconductor power switching device including a first integral current sensor, first and second power terminals, and a control terminal;

a first diode including a second integral current sensor and first and second diode terminals;

means coupling the first power terminal and the first diode terminal to one of said input buses;

means coupling the second power terminal and the second diode terminal to said AC output terminal;

circuit means coupling said AC output terminal to the other of said input buses; and

means coupling said first and second integral current sensors to said control means for supplying feedback information thereto, said control means supplying a control signal to control terminal.

2. The apparatus of claim 1 wherein said one of said input buses is of positive polarity, said other of said input buses is of negative polarity, said first diode terminal comprises a cathode terminal and said second diode terminal comprises an anode terminal.

3. The apparatus of claim 1 wherein said one of said input buses is of negative polarity, said other of said input buses is of positive polarity, said first diode terminal comprises an anode terminal and said second diode terminal comprises a cathode terminal.

4. The apparatus of claim 1 wherein said circuit means includes a second building block comprising:

a second three-terminal semiconductor power switching device including a third integral current sensor, third and fourth power terminals, and a second control terminal;

a second diode including a fourth integral current sensor and third and fourth diode terminals;

means coupling the third power terminal and the third diode terminal to said AC output terminal;

means coupling the fourth power terminal and the fourth diode terminal to the other of said input buses; and

means coupling said third and fourth integral current sensors to said control means for supplying a second feedback signal thereto, said control means supplying a second control signal to said second control terminal.

5. The apparatus of claim 4 wherein said one of said input buses is of positive polarity, said other of said input buses is of negative polarity, said first and third diode terminals comprise cathode terminals and said second and fourth diode terminals comprise anode terminals.

6. The apparatus of claim 4 wherein said one of said input buses is of negative polarity, said other of said input buses is of positive polarity, said first and third diode terminals comprise anode terminals and said second and fourth diode terminals comprise cathode terminals.

7. The apparatus of claim 1 wherein the ratio of sensing section current to main section current of said three-terminal semiconductor power switching device is unequal to the ratio of sensing section current to said main section current of said diode, said first and second integral current sensors supplying separate feedback signals, respectively, to said control means.

8. The apparatus of claim 1 wherein the ratio of sensing section current to main section current of said three-terminal semiconductor power switching device is equal to the ratio of sensing section current to main section current of said diode, said means coupling said first and second integral current sensors to said control means further being directly connected to each other.

9. A building block for an inverter, said inverter including a pair of input buses for receiving a DC input voltage and producing an AC voltage at an AC output terminal thereof, and control means responsive to currents in said building block for supplying control signals thereto, said building block comprising:

a first MOS-gated semiconductor power switching device including a first integral current sensor, a gate terminal and first and second power terminals, respectively;

a first diode including a second integral current sensor and first and second diode terminals;

means coupling the first power and first diode terminals to one of said input buses;

means coupling the second power and second diode terminals to said AC output terminal;

circuit means coupling said AC output terminal to the other of said input buses; and

means coupling said first and second integral current sensors to said control means for supplying a feedback signal thereto, said control means supplying a control signal to said gate terminal.

10. The apparatus of claim 9 wherein said one of said input buses is of positive polarity, said other of said input buses is of negative polarity, said first diode terminal comprises a cathode terminal and said second diode terminal comprises an anode terminal.

11. The apparatus of claim 10 wherein said MOS-gated semiconductor device comprises an IGBT.

12. The apparatus of claim 9 wherein said MOS-gated semiconductor device comprises an IGBT.

13. The apparatus of claim 9 wherein said one of said input buses is of negative polarity, said other of said input buses is of positive polarity, said first diode terminal comprises an anode terminal and said second diode terminal comprises a cathode terminal.

14. The apparatus of claim 13 wherein said MOS-gated semiconductor device comprises an IGBT.

15. The apparatus of claim 9 wherein said circuit means includes a second building block comprising:

a second MOS-gated semiconductor device including a third integral current sensor, gate terminal and third and fourth power terminals;

a second diode including a fourth integral current sensor and third and fourth diode terminals;

means coupling the third power and third diode terminals to said AC output terminal;

means coupling the fourth power and fourth diode terminals to the other of said input buses; and

means coupling said third and fourth integral current sensors to said control means for supplying a second feedback signal thereto, said control means supplying a second control signal to said second gate terminal.

16. The apparatus of claim 15 wherein said one of said input buses is of positive polarity, said other of said input buses is of negative polarity, said first and third diode terminals comprise cathode terminals and said second and fourth diode terminals comprise anode terminals.

17. The apparatus of claim 16 wherein each of said MOS-gated semiconductor devices comprises an IGBT.

18. The apparatus of claim 15 wherein each of said MOS-gated semiconductor devices comprises an IGBT.

19. The apparatus of claim 15 wherein said one of said input buses is of negative polarity, said other of said input buses is of positive polarity, said first and third diode terminals comprise anode terminals and said second and fourth diode terminals comprise cathode terminals.

20. The apparatus of claim 19 wherein each of said MOS-gated semiconductor devices comprises an IGBT.

21. A polyphase full-wave bridge inverter comprising:

positive and negative DC input buses;

a plurality of phase-legs each including an AC output terminal, respectively;

each of said phase-legs further including a set of semiconductor devices comprising an upper transistor and an upper flyback diode connected in parallel between said positive DC input bus and said AC output terminal, and a lower transistor and a lower flyback diode connected in parallel between said negative DC input bus and said AC output terminal;

a separate current sensor integral with at least each of said lower transistors and lower flyback diodes respectively, each of said current sensors being responsive to current flow through its respective integral semiconductor device to provide a proportional sensor current; and

means in each respective phase-leg for deriving a feedback signal from the sensor currents provided by said respective phase-leg.

22. An inverter in accordance with claim 21 wherein each of said upper transistors and upper flyback diodes respectively includes a current sensor integral therewith.

23. An inverter in accordance with claim 21 in which each of said transistors comprises an insulated gate bipolar transistor.

24. An AC drive for supplying a regulated current to a polyphase motor, said drive comprising:

a full-wave bridge inverter including a pair of positive and negative DC input buses and a phase-leg corresponding to each motor phase;

each of said phase-legs including an AC output terminal for connection to said motor;

a set of semiconductor devices comprising an upper transistor and an upper flyback diode connected in parallel between said positive DC input bus and said AC output terminal, and a lower transistor and a lower flyback diode connected in parallel between said negative DC input bus and said AC output terminal;

a separate current sensor integral with at least each of said lower transistors and lower flyback diodes respectively, each of said sensors being responsive to current flow through its respective integral semiconductor device to provide a proportional sensor current;

means in each phase-leg for deriving a feedback signal from the sensor currents provided by said phase-leg; and

a current controller coupled to each of said transistors, said current controller including means for receiving a set of command signals and being responsive to a comparison of said feedback signals with said command signals to control operation of said transistors.

25. An AC motor drive in accordance with claim 24 in which each of said transistors comprises an insulated gate bipolar transistor.

26. An AC motor drive in accordance with claim 24 wherein each of said upper transistors and upper flyback diodes respectively includes a current sensor integral therewith.

27. A variable-frequency drive for supplying a regulated current to a polyphase variable-reluctance motor, said drive comprising:

a power converter circuit including a pair of positive and negative DC input buses and a phase-leg corresponding to each motor phase, respectively;

each of said phase-legs including first and second AC output terminals for connection to a first and second side, respectively, of said each motor phase;

a set of semiconductor devices comprising an upper power switching device connected between one of said DC input buses and said first AC output terminal, a lower power switching device connected between the other of said DC input buses and said second AC output terminal, a lower flyback diode connected between said first AC output terminal and the other of said DC input buses, and an upper flyback diode connected between said one of said DC input buses and said second AC output terminal;

a separate current sensor integral with each of said lower power switching device and said lower flyback diode, respectively, each of said sensors being responsive to current flow through its respective integral semiconductor device to provide a proportional sensor current;

a current controller coupled to each of said power switching devices; and

means coupling each said separate current sensor, respectively, in each phase-leg to said current controller for supplying signals to said current controller, said controller receiving a set of command signals and being responsive to a comparison of said feedback signals with said command signals to control operation of said power switching devices.

28. The apparatus of claim 27 wherein said one of said DC input buses is of negative polarity and said other of said input buses is of positive polarity.

29. The apparatus of claim 28 wherein each of said power switching devices comprises an IGBT.

30. A variable-frequency drive in accordance with claims 27 in which each of said power switching devices comprises an insulated gate bipolar transistor.

31. The apparatus of claim 27 wherein said one of said DC input buses is of positive polarity and said other of said input buses is of negative polarity.

32. The apparatus of claim 31 wherein each of said power switching devices comprises an IGBT.