Method and composition for depositing silicon dioxide layers

• US 4,780,334 A
• Filed: 03/14/1988
• Issued: 10/25/1988
• Est. Priority Date: 03/13/1987
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Ackerman, Frederick
• Primary Examiner(s): Morris, Theodore
• Application Number:
  US07/170,620
• Time in Patent Office: 225 Days
• Field of Search: 427/255.7, 427/294, 427/164, 427/166, 427/167, 427/126.2, 427/126.3, 427/109, 427/58, 427/248.1, 427/255.1
• US Class Current: 427/248.1
• CPC Class Codes: C23C 16/402 Silicon dioxide

Abstract

A method and composition for depositing SiO₂ on substrates by chemical vapor deposition are provided wherein aminoxysilane reagents are utilized. These aminoxysilane reagents pyrolyze at about the same temperatures as organometallic reagents, permitting multiple alternating layers of silicon dioxide and metal oxides to be formed at the same operating temperature.

Claims

1. A chemical vapor deposition method for forming SiO₂ layers on a substrate which comprises contacting organosilicon reagent vapors with the surface of a heated substrate and heating said substrate to a temperature sufficiently high to pyrolyze said organosilicon vapors onto said surface,

said organosilicon reagent comprising at least one compound of the formula

View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)

2. A method as in claim 1 wherein said substrate is heated to a temperature below 475°

C.

3. A method as in claim 1 wherein each R'"'"' of formula I is independently alkyl radicals of from 1 to 8 carbon atoms, each R" is independently selected from the group consisting of alkyl and alkene radicals of from 1 to 8 carbon atoms and aryl radicals from 6 to 10 carbon atoms and each R'"'"'" is independently alkene of from 1 to 8 carbon atoms.

4. A method as in claim 1 wherein x is 3 or 4, and each R'"'"' of formula I is selected from the group consisting of methyl, ethyl, propyl and isopropyl.

5. A method as in claim 1 wherein the organosilicon reagent is selected from the group consisting of Si[ON(C₂ H₅)₂ ]₄, Si[ON(CH₃)₂ ]₄ and Si(ONCHCH₃)[ON(C₂ H₅)₂ ]₃.

6. A method as in claim 1 wherein the organosilicon reagent is vaporized at a temperature in the range of 50°

to 150°

C. at a pressure in the range of 1 micron to 1000 microns of mercury.

7. A method as in claim 1 wherein said substrate is selected from the group consisting of silicon, silicon dioxide glass, boron glass, tantalum oxide-coated glass, titanium oxide-coated glass, Si₃ N₄ -coated glass, metal, metal alloy, carbon fibers, carbon composites, α

-Si, GaAs, Hg_1-m M_m Te, where M is a divalent metal and m is 0 to 1, mixtures of III and Group V elements of the periodic table and mixtures of Group II and Group VI elements of the periodic table.

8. A method as in claim 1 wherein pyrolysis of said organosilicon reagent takes place at a pressure in the range of 1 micron to 1000 microns of mercury and a temperature in the range of 350°

C. to 450°

C.

9. A method as in claim 1 wherein the SiO₂ layer produced has a thickness in te range of 50 Angstroms to 100,000 Angstroms.

10. A method as in claim 1 wherein pyrolysis of the organosilicon reagent takes place in the presence of an inert carrier gas.

11. A method as in claim 1 further comprising the additional step of forming a metal oxide layer on said substrate by pyrolyzing a vaporized organometallic reagent on the surface of said substrate.

12. A method as in claim 11 wherein the metal oxide layer is formed subsequent to deposition of SiO₂.

13. A method as in claim 11 wherein the metal oxide layer is formed prior to deposition of SiO₂.

14. A method as in claim 11 wherein the organometallic reagent and organosilicon reagent are pyrolyzed at about the same temperature selected from values falling in the range of about 350°

C. to 500°

C.

15. A method as in claim 14 wherein more than 2 alternating layers of metal oxide and SiO₂ are formed.

16. A method as in claim 11 wherein the metal oxide layer is TiO₂, formed by pyrolysis of an organometallic reagent selected from the group consisting of titanium ethoxide and titanium isopropoxide.

17. A method as in claim 11 wherein the metal oxide layer is Ta₂ O₅ formed by pyrolysis of an organometallic reagent selected from the group consisting of tantalum pentaethoxide and tantalum pentapropoxide.