Capacitor tantalum surface for use as a counterelectrode device and method

• US 4,780,797 A
• Filed: 12/16/1987
• Issued: 10/25/1988
• Est. Priority Date: 12/16/1987
• Status: Expired due to Term

• Current Assignee: Tansistor Electronics Incorporated
• Original Assignee: Tansistor Electronics Incorporated
• Inventors: Libby, Stuart E.
• Primary Examiner(s): GRIFFIN, DONALD
• Application Number:
  US07/133,547
• Time in Patent Office: 314 Days
• Field of Search: 361/433, 29/570.1
• US Class Current: 361/509
• CPC Class Codes: H01G 9/0425 specially adapted for cathode

Abstract

A counterelectrode and a method for providing the counterelectrode wherein an inherently high effective capacitance surface is formed on tantalum. The oxide forming ability of the tantalum surface is destroyed by removing existing oxide from the surface, depositing on the surface a non-continuous layer of a platinum family metal, and alloying the deposited metal with the tantalum thereby forming alloy layer. A second layer of metal, also selected from the platinum family, may then be deposited over the alloy layer. Alternately the platinum family metal may be sputtered onto the surface of the tantalum with or without an the alloying step. The second deposition produces a spongy layer and is accomplished by conventional electrolytic techniques.

Claims

1. A method for providing an inherently high effective capacitance counterelectrode surface on tantalum for use in an electrolytic capacitor, comprising the steps of:

(a) removing existing oxide from the tantalum;

(b) depositing over the tantalum a noncontinuous layer of a first platinum family metal; and

,

(c) alloying the deposited first metal with the tantalum to form an alloy layer.

2. The method of claim 1 wherein step (c) is followed by the further step of:

(d) depositing over the alloy layer a layer of a second platinum family metal.

3. The method of claim 2 wherein step (d) comprises electrolytic plating over the alloy layer.

4. The method of claim 2 wherein the first metal is the same as the second metal.

5. The method of claim 2 wherein the first metal is different from the second metal.

6. The counterelectrode of claim 5 wherein the tantalum surface comprises the surface of a solid tantalum can.

7. The method of claim 1 wherein step (a) comprises treating the surface of the tantalum with an acid.

8. The method of claim 7 wherein the acid comprises hydrofluoric acid.

9. The method of claim 1 wherein step (a) includes treating the surface of the tantalum with an activator.

10. The method of claim 1 wherein step (b) comprises electroless plating the surface of the tantalum.

11. The method of claim 1 wherein step (c) comprises providing heat in an inert atmosphere to the deposited first metal and tantalum surface.

12. The method of claim 11 wherein step (c) includes providing heat at a temperature between 825°

and 165°

C.

13. The method of claim 1 wherein the first metal is palladium.

14. A counterelectrode for a tantalum electrolytic capacitor having an inherently high effective capacitance inner tantalum surface, comprising an alloy first layer formed over the tantalum surface the alloy first layer comprising tantalum and a platinum family metal.

15. The counterelectrode of claim 14 further comprising a second layer formed over the alloy first layer the second layer comprising a platinum family metal.

16. The counterelectrode of claim 15 wherein the first and second layers comprise the same platinum family metal.

17. The counterelectrode of claim 15 wherein the first and second layers comprise different platinum family metals.

18. The counterelectrode of claim 15 wherein the second layer is spongy.

19. The counterelectrode of claim 14 wherein the tantalum surface comprises the surface of a tantalum foil.

20. The counterelectrode of claim 14 wherein the tantalum surface comprises a tantalum layer surface on a laminated can.

21. A method for providing an inherently high effective capacitance counterelectrode surface on tantalum for use in an electrolytic capacitor, comprising the steps of:

(a) removing existing oxide from the tantalum;

(b) sputtering over the tantalum a layer of a first platinum family metal.

22. The method of claim 21 wherein step (b) is followed by the further step of:

(c) depositing over the alloy layer a spongy layer of a second platinum family metal.

23. The method of claim 22 wherein step (c) comprises electrolytic deposition over the alloy layer.

24. The method of claim 22 wherein the first metal is the same as the second metal.

25. The method of claim 22 wherein the first metal is different from the second metal.

26. The method of claim 21 wherein step (b) is followed by the step of alloying the sputtered first metal to form an alloy layer.

27. The method of claim 21 wherein step (a) comprises removing oxide by means of a glow discharge process.

28. The method of claim 21 wherein the first metal is palladium.