Trench etch process for a single-wafer RIE dry etch reactor

• US 4,784,720 A
• Filed: 07/08/1987
• Issued: 11/15/1988
• Est. Priority Date: 05/03/1985
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Douglas, Monte A.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/071,111
• Time in Patent Office: 496 Days
• Field of Search: 156/643, 156/646, 156/648, 156/653, 156/657, 156/659.1, 156/662, 252/79.1, 204/192.11, 204/192.22, 204/192.23, 204/192.37, 357/23.6, 357/47, 357/51, 357/55, 427/38, 427/39, 437/61, 437/65, 437/66, 437/72, 437/73, 437/228, 437/234, 437/238, 437/241
• US Class Current: 438/695
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process
• CPC Class Codes: H01L 21/3085 characterised by their behaviour during the process, e.g. soluble masks, redeposited masks

Abstract

A plasma dry etch process for trench etching in single slice RIE etch reactors wherein a selective sidewall passivation is accomplished to control the profile of the trench being etched. The process comprises methods of passivating the sidewall by passivation on a molecular scale and by passivation by a veneer type passivation comprising buildup of a macroscopic residue over the surface of the sidewall. Several methods are disclosed for forming and shaping the passivating layers (both mono-atomic and bulk). By carefully controlling the composition and shape of the sidewall passivating veneer in conjunction with other etch factors, the desired trench profiles can be achieved.

Claims

1. A process for etching a trench in a substrate, comprising the steps of:

etching a trench in a predetermined trench location of said substrate by means of a plasma source of etchants and ions;

selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.

2. A process for etching a trench in silicon, comprising-the steps of:

etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of silicon etchants and ions;

selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.

3. The process of claim 2, wherein said step of selectively depositing materials comprises:

selectively depositing materials from the plasma onto the sidewalls of said trench to control the profile of the trench being etched.

4. The process of claim 3, further comprising:

including in said plasma an etchant which reacts with silicon atoms of said silicon substrate to form etch products which deposit on the trench sidewall.

5. The process of claim 4, further comprising:

including in said plasma at least one species which bonds to a silicon surface of said trench and is not readily displaced by silicon etchants in the plasma to volatilize the silicon surface.

6. The process of claim 3, further comprising:

including in said plasma at least one species which bonds to a silicon surface of said trench and is not readily displaced by silicon etchants in the plasma to volatilize the silicon surface.

7. The method of claim 4, further comprising:

forward sputtering at least a portion of the material selectively deposited on the trench sidewall to a position on the trench sidewall nearer the bottom of the trench.

8. The method of claim 7, further comprising:

including in said plasma at a predetermined time in said etch process an agent which removes at least a portion of said materials selectively deposited on said trench sidewall.

9. The method of claim 6, wherein said material selectively deposited on said trench sidewall is thicker near the mouth of the trench than it is near the bottom of the trench.

10. The method of claim 9, wherein the material selectively deposited near the mouth of said trench serves to reduce sidewall ion bombardment by shadowing the lower trench sidewalls.

11. The method of claim 10, further including:

forward sputtering silicon dioxide from an upper region of said silicon substrate to positions on the trench sidewall near the mouth of the trench.

12. The method of claim 3, further including:

modifying during said etch process said material selectively deposited on said trench sidewall to vary the profile of the trench being etched.

13. The method of claim 5, further including:

modifying during said etch process said material selectively deposited on said trench sidewall to vary the profile of the trench being etched.

14. The method of claim 4, wherein said etchant comprises a halogen source.

15. The method of claim 14, wherein said etchant comprises at least one of:

a bromine source;

a chlorine source; and

an iodine source.

16. The method of claim 14, wherein said etchant comprises at least one of:

HBr, Br₂, CF₃ Br, HCl, and HI.

17. The method of claim 4, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.

18. The method of claim 14, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.

19. The method of claim 17, wherein said etch products, in conjunction with one of oxygen and nitrogen, form a product which deposits on the sidewall of the trench.

20. The method of claim 3, further comprising including in said plasma species which combine to form polymeric residues on the sidewall of said trench.

21. The method of claim 20, wherein said polymeric residues comprise organic polymeric residues.

22. The method of claim 20, wherein said polymeric residues comprise inorganic polymeric residues.

23. The method of claim 3, further comprising:

including in said plasma gaseous HBr, BCl₃ and N₂.

24. The method of claim 3, further comprising:

including in said plasma gaseous HBr, BCl₃ and CO.

25. The method of claim 3, further comprising:

including in said plasma gaseous HBr, SiCl₄ and

26. A process for etching a trench in a silicon substrate, comprising the steps of:

etching a trench in a predetermined trench location of said silicon substrate by means of a plasma source of ions;

passivating the sidewalls of the trench by deposition of materials on the sidewalls to control the profile of the trench being etched.

27. The process of claim 26, wherein said passivation of the trench sidewalls comprises both:

passivating the sidewalls on a molecular level, and passivating the sidewalls by a veneer type passivation of the sidewall.

28. The process of claim 27, further comprising:

including in said plasma a precipitating agent.

29. The process of claim 27, further comprising:

including in said plasma a polymerizing agent.