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Trench etch process for a single-wafer RIE dry etch reactor

  • US 4,784,720 A
  • Filed: 07/08/1987
  • Issued: 11/15/1988
  • Est. Priority Date: 05/03/1985
  • Status: Expired due to Term
First Claim
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1. A process for etching a trench in a substrate, comprising the steps of:

  • etching a trench in a predetermined trench location of said substrate by means of a plasma source of etchants and ions;

    selectively depositing materials on the sidewalls of said trench to control the profile of the trench being etched.

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