Integrated thin-film diaphragm; backside etch

• US 4,784,721 A
• Filed: 02/22/1988
• Issued: 11/15/1988
• Est. Priority Date: 02/22/1988
• Status: Expired due to Fees

• Current Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Ridley, Jeffrey A., James, Steven D., Holmen, James O.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/158,824
• Time in Patent Office: 267 Days
• Field of Search: 156/647, 156/648, 156/652, 156/653, 156/656, 156/657-659.1, 156/661.1, 156/662-665, 29/610 SG, 29/620, 338/2, 338/4, 338/42, 252/79.2, 252/79.4, 252/79.5, 357/4, 357/26, 357/28, 73/700, 73/715, 73/719, 73/720, 73/725, 73/726
• US Class Current: 216/2
• CPC Class Codes: G01F 1/6845 Micromachined devices
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence
• CPC Class Codes: Y10T 29/49103 Strain gauge making

Abstract

A microbridge air flow sensor having a silicon nitride diaphragm formed on the surface of a single crystal silicon wafer. A rectangular 500 angstrom thick sacrificial layer was deposited on the silicon surface before the silicon nitride to define the exact position of the diaphragm. A series of etches from the backside of the wafer is performed to fabricate the device. A first silicon anisotropic etch from the backside is stopped at the sacrificial layer. A sacrificial layer selective etch is applied from the backside first pit to the sacrificial layer to remove all of the rectangular sacrificial layer. Anisotropic etch is again applied into the space created by the removed sacrificial layer whereby the second etch attacks the silicon exposed by the removal of the sacrificial layer and etches downward forming a second anisotropic etch pit. Thus all the etches are from the backside of the silicon wafer.

Claims

1. A process for fabricating a thin film microsensor for air flow comprising the steps of:

providing a single crystal (100) silicon wafer having a front planar surface, a backside surface and having a <

110>

direction;

depositing and delineating a rectangular area of a thin film layer of sacrificial selectively etchable material on the silicon front surface;

depositing a thin film of silicon nitride on the selectively etchable material and the rest of the silicon front surface, the film being thicker than the thickness of the sacrificial material;

depositing and delineating a thin film of electrically resistive material on the silicon nitride to form desired circuit elements such as detector resistors, circuit resistors and a heater resistor, said heater resistor and detector resistors being located over said sacrificial material area;

depositing an additional thin film of silicon nitride over the resistive material and the previous silicon nitride;

depositing a thin film of silicon nitride over the backside surface;

opening a cut through the silicon nitride on the backside to expose an area of the backside silicon surface, the cut being rectangular and orthogonal to the <

110>

direction;

introducing an anisotropic etch to the backside silicon surface at said nitride cut to anisotropically etch a first anisotropic pit through the silicon wafer until the layer of sacrificial selectively etchable material is reached;

introducing selective etch through the first anisotropic pit to etch out all of the sacrificial selectively etchable material leaving a thin cavity in its place; and

,

introducing the anisotropic etch through the first pit and the thin cavity to anisotropically etch the silicon exposed by the removal of the sacrificial material and form a second anisotropic etch pit.

2. The process according to claim 1 in which said sacrificial selectively etchable material is selected from the group consisting of NiFe, Cr, and Ti:

W, and in which said selectively etchable material acts as an etch stop to the anisotropic etch.

3. The process according to claim 2 in which the sacrificial material is NiFe.

4. The process according to claim 2 in which the sacrificial material is Ti:

W.

5. The process according to claim 2 in which the sacrificial material is Cr.

6. The process according to claim 1 in which said thin film layer of sacrificial selectively etchable material is about 500-1000 angstroms in thickness.

7. The process according to claim 3 in which said selective etch is 30 parts sulfuric acid, 9 parts water, and 1 part conc. hydrogen peroxide at room temperature.

8. The process according to claim 4 in which said selective etch for Ti:

W is 10 parts water, and 1 part conc. hydrogen peroxide at ˜

60°

C.

9. The process according to claim 5 in which said selective etch for Cr is 181 grams/liter cerric ammonium nitride, 48 ml/liter acitic acid, and water to make 1 liter of solution at room temperature.

10. The process according to claim 1 in which said anisotropic etch is KOH.

11. The process according to claim 1 in which said sacrificial selectively etchable material is aluminum.

12. The process according to claim 11 in which said anisotropic etch is KOH which is also a selective etch for aluminum whereby the three etching steps are a continuous process.

13. The process according to claim 1 and further comprising the step of:

forming an oxide diffusion barrier of about 500-1000 angstroms of SiO₂ on the front planar surface of the silicon wafer preceding the step of depositing and delineating of the sacrificial selectively etchable material.