Semiconductor contact silicide/nitride process with control for silicide thickness

• US 4,784,973 A
• Filed: 08/24/1987
• Issued: 11/15/1988
• Est. Priority Date: 08/24/1987
• Status: Expired due to Term

• Current Assignee: Inmos Limited (STMicroelectronics NV)
• Original Assignee: Inmos Limited (STMicroelectronics NV)
• Inventors: Hill, Christopher W., Stevens, E. Henry, McClure, Paul J.
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): Quach, T. N.
• Application Number:
  US07/088,681
• Time in Patent Office: 449 Days
• Field of Search: 437/192, 437/190, 437/200, 437/201, 437/195, 437/178, 437/179, 437/238, 437/239, 437/241, 437/242, 437/161, 357/67, 357/71, 148/DIG. 147, 148/DIG. 112, 148/DIG. 118
• US Class Current: 438/653
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: Y10S 148/112 Nitridation, direct, of silicon
• CPC Class Codes: Y10S 148/118 Oxide films
• CPC Class Codes: Y10S 148/147 Silicides
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region

Abstract

A titanium silicide/titanium nitride process is disclosed wherein the thickness of the titanium nitride can be regulated with respect to the titanium silicide. In particular, a control layer is formed in the contact opening during a reactive cycle to form a relatively thin (20 to 50 angstrom) control layer. Titanium is thereafter deposited and in another thermal reaction the control layer retards the development of titanium silicide without retarding the development of titanium nitride so that the thickness of titanium silicide is kept small. A double titanium process can also be used.

Claims

1. In the fabrication of an integrated circuit, a process for establishing an electrical contact at a contact opening in an insulative material to an underlying silicon region of said integrated circuit and for forming a metallurgic barrier over said contact comprising the steps of:

establishing a relatively thin control region in said contact opening over said underlying silicon region, said control region comprising a compound including silicon oxygen and nitrogen;

then

establishing a first layer comprising a transition metal over said insulative material and said control region; and

then

thermally cycling the integrated circuit to convert at least part of said transition metal layer into a metallurgic barrier and to establish a low resistance silicide contact region below said barrier in said underlying silicon region previously exposed by said contact opening, said control region retarding the development of said silicide contact region in said contact opening, said control region being replaced during said thermally cycling step by said silicide region, said control region thereby permitting the thickness of said silicide contact region relative to said metallurgic barrier to be controlled.

2. The process of claim 1 wherein said step of establishing a control region comprises surrounding said contact opening with a reactive gas mixture and thermally cycling said integrated circuit to form said control region by reacting a portion of said underlying region with said gas mixture during said thermal cycle.

3. The process according to claim 1, wherin said thermally cycling step comprises exposing said metal first layer to a nitridating atmosphere and reacting said metal first layer with said atmosphere during said cycling step.

4. The process according to claim 3, wherein said metal layer comprises titanium and wherein said nitridating atmosphere includes nitrogen or ammonia gas.

5. The process according to claim 1 wherein said first layer comprises titanium, wherein said thermally cycling step comprises thermally cycling said integrated circuit in an atmosphere containing nitrogen or ammonia thereby to form titanium nitride.

6. The process according to claim 1 wherein said step of establishing a control region comprises thermally cycling said integrated circuit prior to said step of establishing a first layer of transition metal, by reacting said exposed underlying layer in an atmosphere to form said control region.

7. The process according to claim 6 wherein said control layer supplies oxygen to grain boundaries in the metallurgic barrier.

8. The process according to claim 6 wherein said atmosphere includes nitrogen.

9. The process according to claim 8 wherein said control layer supplies nitrogen to grain boundaries in the metullurgic barrier.

10. The process of claim 1 wherein said contact opening extends through a dielectric containing silicon to expose said underlying region, said underlying region also containing silicon, wherein said control region is established on the exposed surface of said underlying region within said contact opening, wherein said establishing a first layer of transition metal comprises depositing a layer of titanium over said dielectric and said control region, and wherein said process includes establishing a region adjoining said dielectric, said region comprising a compound or mixture of titanium, nitrogen, silicon, and oxygen.

11. The process of claim 1 wherein said establishing a control region step comprises establishing a control region in said contact opening only.