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Anisotropic etch process for tungsten metallurgy

  • US 4,786,360 A
  • Filed: 03/30/1987
  • Issued: 11/22/1988
  • Est. Priority Date: 03/30/1987
  • Status: Expired due to Fees
First Claim
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1. A method for anisotropically etching a layer of tunsten metal formed on an insulating layer disposed on a substrate, comprising the steps of:

  • forming an insulating layer on a substrate, and etching said insulating layer to define apertures therethrough;

    forming a layer of tungsten metal on said insulating layer;

    placing said substrate into an etch chamber; and

    generating a gaseous plasma comprised of Cl2 and oxygen, wherein oxygen comprises approximately 25%-45% of the binary mixture of Cl2 and oxygen, said gaseous plasma etching said layer of tungsten metal without appreciably etching said insulating layer wherein the binary mixture is present in an amount sufficient to provide an active etching agent for the tungsten.

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