Power semiconductor module

• US 4,788,626 A
• Filed: 02/12/1987
• Issued: 11/29/1988
• Est. Priority Date: 02/15/1986
• Status: Expired due to Fees

• Current Assignee: Brown Boveri & CIE AG (ABB Limited)
• Original Assignee: Brown Boveri & CIE AG (ABB Limited)
• Inventors: Hahn, Bertold, Bayerer, Reinhold, Neidig, Arno
• Primary Examiner(s): Pellinen, A. D.
• Assistant Examiner(s): Thompson, Gregory D.
• Application Number:
  US07/014,272
• Time in Patent Office: 656 Days
• Field of Search: 174/52 PE, 174/52 H, 174/52 R, 174/52 FP, 357/74, 357/80, 357/81, 357/72, 361/386-389, 361/394-395, 361/399
• US Class Current: 361/715
• CPC Class Codes: H01L 2224/40 of an individual strap connector
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 24/01 Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/0102 Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A power semiconductor module includes a plastic housing having an interior. A substrate in the form of a ceramic plate with upper and lower surfaces is inserted in the housing as a housing bottom. Metallizations are disposed on the upper and lower surfaces of the ceramic plate. The metallization on the upper surface of the ceramic plate faces the interior of the housing and is structured to form conductor paths. Power semiconductor components, connecting elements and terminal elements for external termimals all are disposed on the upper surface of the ceramic plate. A frame is connected to the substrate in the interior of the housing for sealing against moisture.

Claims

1. Power semiconductor module, comprising a plastic housing having an interior;

a substrate in the form of a ceramic plate with upper and lower surfaces inserted in said housing as a housing bottom;

metallizations disposed on said upper and lower surfaces of said ceramic plate, said metallization on said upper surface of said ceramic plate facing said interior of said housing and being structured to form conductor paths;

power semiconductor components, connecting elements and terminal elements for external terminals all being disposed on said upper surface of said ceramic plate;

a frame connected to said substrate in said interior of said housing, said frame having inner and outer surfaces; and

sealing compound surrounding said inner and outer surfaces of said frame and cooperating with said frame for sealing againt moisture.

2. Power semiconductor module according to claim 1, wherein said metallizations on said ceramic plate are at least 0.1 mm thick.

3. Power semiconductor module according to claim 1, wherein said metallizations on said ceramic plate are 0.3 mm thick.

4. Power semiconductor module according to claim 1, wherein said frame is formed of ceramic material having substantially the same thermal expansion properties as said substrate.

5. Power semiconductor module according to claim 1, wherein said frame is formed of metal.

6. Power semiconductor module according to claim 5, wherein said frame is formed of ductile sheet copper.

7. Power semiconductor module according to claim 5, wherein said frame is formed of sheet nickel-iron.

8. Power semiconductor module according to claim 1, wherein said frame has a ribbing formed thereon.

9. Power semiconductor module according to claim 1, wherein said metallization on said upper surface of said ceramic plate has a metal rim formed thereon in addition to said conductor paths.

10. Power semiconductor module according to claim 1, wherein said frame has an intermediate bottom forming a soldering mold.