One-unit photo-activated electrolyzer

• US 4,790,916 A
• Filed: 08/18/1987
• Issued: 12/13/1988
• Est. Priority Date: 03/14/1984
• Status: Expired due to Fees

• Current Assignee: Texas A&M University System
• Original Assignee: Texas A&M University System
• Inventors: Bockris, John O'M, Murphy, Oliver J.
• Primary Examiner(s): Valentine, Donald R.
• Application Number:
  US07/086,561
• Time in Patent Office: 483 Days
• Field of Search: 204/129, 204/228, 204/242, 429/111
• US Class Current: 205/340
• CPC Class Codes: C25B 1/55 Photoelectrolysis

Abstract

A photo-activated semiconductor device is adapted to be exposed to light energy. Two physically separated electrocatalysts are placed in electrical contact with the photo-activated semiconductor device. An electrolytic solution physically separated from the semiconductor device is placed in electrical contact with both electrocatalysts. A method for supplying electrical energy to an anode and a cathode is an electrochemical reaction zone containing an electrolytic solution which comprises positioning a photo-activated semiconductor device having separate donor and acceptor regions external to an electrolytic solution. The doner region is electrically connected to a cathode and the acceptor region is electrically connected to the anode. A portion of the photo-activated semiconductor device is exposed to a source of radiation which is external to the reaction zone. The products derived from the electrolytic solution are collected for later use.

Claims

1. A method, comprising:

(a) engaging with an electrolytic solution contained in an electrochemical reaction zone an anode and a cathode, said anode and cathode being in physical and ohmic contact with a photo-activated semiconductor device having separate donor and acceptor regions external of the electrolytic solution, said anode being contacted with the acceptor region and said cathode being contacted with the donor region; and

(b) exposing at least a portion of said photo-activated semiconductor device external of said electrolytic solution to a source of radiation.

2. A method, comprising:

(a) engaging with an electrolytic solution contained in an electrochemical reaction zone an electrocatalyst which is in physical and ohmic contact with a first surface of a photo-activated semiconductor device; and

(b) irradiating with light energy a second surface of said photo-activated semiconductor device external of the electrolytic solution.

3. The method of claim 2, wherein said semiconductor device comprises amorphous silicon or gallium arsenide.

4. The method of claim 2, wherein said semiconductor device comprises a stack of two or more amorphous silicon semiconductors connected for creating a potential therein.