Plasma treating method and apparatus therefor

• US 4,795,529 A
• Filed: 10/19/1987
• Issued: 01/03/1989
• Est. Priority Date: 10/17/1986
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Hirobe, Kado, Kakehi, Yutaka, Kawahara, Hironobu, Kawasaki, Yoshinao, Kudo, Katsuyoshi
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/109,318
• Time in Patent Office: 442 Days
• Field of Search: 156/345, 156/643, 156/646, 156/651, 156/653, 156/657, 156/659.1, 156/662, 204/192.11, 204/192.12, 204/192.37, 204/298, 204/192.25, 427/38, 427/39, 118/728, 118/50.1, 118/620, 118/623, 118/624, 252/79.1
• US Class Current: 216/37
• CPC Class Codes: C23C 16/517 using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
• CPC Class Codes: H01J 2237/3348 control of ion bombardment energy
• CPC Class Codes: H01J 37/32706 Polarising the substrate
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Abstract

This invention relates to a plasma treating method and apparatus therefor. The plasma treating method comprises rendering a gas having a critical potential plasmic under a reduced pressure and changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. The plasma treating apparatus comprises means for rendering a gas having a critical potential plasmic under a reduced pressure and means for changing an acceleration voltage for accelerating ions in the plasma towards a sample interposing the critical potential. According to the present invention, the etching step and the film formation step can be carried out alternately and the plasma treating time can be shortened.

Claims

1. A plasma treating method comprising the steps of:

rendering a gas having a critical potential plasmic under a reduced pressure, said critical potential being a potential at which an etching action and a deposition action are in equilibrium with each other when a sample is treated with the plasma which is generated by rendering a certain kind of gas plasmic under a predetermined plasma condition and applying an acceleration voltage to ions in said plasma so as to let them be incident to said sample; and

changing said acceleration voltage for accelerating said ions in said plasma towards said sample interposing said critical potential.

2. A plasma treating method according to claim 1, wherein said acceleration voltage is provided by the combination of a D.C voltage and a radio frequency voltage with a frequency having a half cycle time within the time required by said ions in said plasma to pass through an ion sheath.

3. A plasma treating method according to claim 1, wherein said acceleration voltage is provided by a radio frequency voltage with a frequency having a half cycle time from 100 KHz to above the time required by said ions in said plasma to pass through an ion sheath.

4. A plasma treating method according to claim 1, wherein said acceleration voltage is provided by the combination of an A.C. voltage with a low frequency and a radio frequency voltage with a frequency having a half cycle time within the time required by said ions in said plasma to pass through an ion sheath.

5. A plasma treating method according to claim 1, wherein said acceleration voltage is provided by a D.C. voltage.

6. A plasma treating method according to claim 1, wherein said acceleration voltage is a voltage to be applied to a sample table for said sample or a voltage to be applied to a grid electrode disposed between said sample and said plasma.

7. A plasma treating method according to claim 1, wherein said acceleration voltage is changed in such a manner as to interpose said critical potential and is changed, too, during the etching operation.

8. A plasma treating method comprising the steps of:

rending a gas having a critical potential plasmic under a reduced pressure, said critical potential being a potential at which an etching action and a deposition action are in equilibrium with each other when a sample is treated with the plasma which is generated by rendering a certain kind of gas plasmic under a predetermined plasma condition and applying an acceleration voltage to ions in said plasma so as to let them be incident to said sample; and

changing said acceleration voltage for accelerating ions in said plasma towards said sample interposing said critical potential and stepwise etching said sample in the direction of depth by carrying out alternately said etching action and said deposition action.

9. A plasma treating method according to claim 8, wherein said etching action takes place within the time at which undercut occurring on said sample is within a range of allowable values and said deposition action takes place within the time at which a film can be formed to a film thickness sufficient to act as a protective film on side surfaces of said sample.

10. A plasma treating method according to claim 8, wherein said gas is either a single gas of C₂ Cl₃ F₃, C₂ Cl₄ F₂, CCl₄ or C₄ F₈ or its mixed gas with SF₆ or NF₃ when said sample is polysilicon, and said gas is either a single gas of CCl₄, CF₄, C₂ F₆, C₄ F₈ or SiCl₄ or its mixed gas with Cl₂ when said sample is aluminum.

11. A plasma treating apparatus comprising:

means for rending a gas having a critical potential plasmic under a reduced pressure, said critical potential being a potential at which an etching action and a deposition action are in equilibrium with each other when a sample is treated with the plasma which is generated by rendering a certain kind of gas plasmic under a predetermined plasma condition and applying an acceleration voltage to ions in said plasma so as to let them be incident to said sample; and

means for changing said acceleration voltage for accelerating said ions in said plasma towards said sample interposing said critical potential.

12. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is provided by a D.C. power source and a radio frequency power source with a frequency having a half cycle time within the time required by said ions in said plasma to pass through an ion sheath.

13. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is provided by a radio frequency power source with a frequency having a half cycle time from 100 KHz to above the time required by said ions in said plasma to pass through an ion sheath.

14. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is provided by an A.C. power supply with a low frequency and a radio frequency power source with a frequency having a half cycle time within the time required by said ions in said plasma to pass through an ion sheath.

15. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is provided by a D.C. power source.

16. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is provided by a power source applied to a sample table of said sample or a power source applied to a grid electrode disposed between said sample and said plasma.

17. A plasma treating apparatus according to claim 11, wherein said acceleration voltage is changed in such a manner as to interpose said critical potential and is changed, too, during the etching operation.

18. A plasma treating apparatus comprising:

means for rendering a gas having a critical potential plasmic under a reduced pressure, said critical potential being a potential at which an etching action and a deposition action are in equilibrium with each other when a sample is treated with the plasma which is generated by rendering a certain kind of gas plasmic under a predetermined plasma condition and applying an acceleration voltage to ions in said plasma so as to let them be incident to said sample; and

means for changing said acceleration voltage for accelerating ions in said plasma towards said sample interposing said critical potential and carrying out alternately said etching action and said deposition action.

19. A plasma treating apparatus according to claim 18, wherein said gas is either a single gas of C₂ Cl₃ F₃, C₂ Cl₄ F₂, CCl₄ or C₄ F₈ or its mixed gas with SF₆ or NF₃ when said sample is polysilicon, and said gas is either a single gas of CCl₄, CF₄, C₂ F₆, C₄ F₈ or SiCl₄ or its mixed gas with Cl₂ when said sample is aluminum.

20. A plasma treating apparatus comprising:

means for rendering a gas having a critical potential plasmic under a reduced pressure by use of the action of an electric field by microwaves and the action of a magnetic field by magnetic field generation means, said critical potential being a potential at which an etching action and a deposition action are in equilibrium with each other when a sample is treated with the plasma which is generated by rendering a certain kind of gas plasmic under a predetermined plasma condition and applying an acceleration voltage to ions in said plasma so as to let thm be incident to said sample;

means for applying said acceleration voltage to a sample table on which said sample is placed; and

means for changing said acceleration voltage interposing said critical potential.

21. A plasma treating apparatus comprising:

a vacuum treating vessel having a discharge tube disposed at an upper opening thereof;

a discharge space within said discharge tube;

a waveguide disposed so as to encircle said discharge tube, said waveguide including a magnetron for generating microwaves;

an electromagnetic coil disposed around the outer periphery of said discharge tube through said waveguide;

an electrode including a sample table disposed within said vacuum treating vessel so as to allow support of a sample to be treated in said discharge space;

a ground electrode disposed around the outer periphery of said electrode and electrically insulated therefrom;

means to introduce gas into said discharge space, said gas having a critical potential at which an etching action and a deposition action of said gas are in equilibrium; and

means to control an acceleration voltage connected to said electrode, for accelerating ions in a plasma of said gas, so as to alternately etch and deposit said sample.

22. A plasma treating apparatus according to claim 21, wherein said means to control an acceleration voltage, comprises:

a radio frequency power source for supplying radio frequency voltage to said electrode, connected to said electrode through a matching box;

a D.C. power source for supplying D.C. voltage to said electrode, connected to said electrode through a lower pass filter;

an output voltage controller connected to said D.C. power source; and

an output waveform controller connected to said output voltage controller.

23. A plasma treating apparatus according to claim 21, wherein said means to control an acceleration voltage, comprises:

a radio frequency power source connected to said electrode through a matching box; and

an output voltage control means connected to said radio frequency power source.

24. A plasma treating apparatus according to claim 21, wherein said means to control an acceleration voltage, comprises:

a radio frequency power source connected to said electrode through a synthesizer;

an A.C. waveform generator connected to said synthesizer; and

an output waveform controller connected to said A.C. waveform generator.

25. A plasma treating apparatus comprising:

a vacuum treating vessel having a discharge tube disposed at an upper opening thereof;

a discharge space within said discharge tube;

a waveguide disposed so as to encircle said discharge tube, said waveguide including a magnetron for generating microwaves;

an electromagnetic coil disposed around the outer periphery of said discharge tube through said waveguide;

an electrode including a sample table disposed within said vacuum treating vessel so as to allow support of a sample to be treated in said discharge space;

means to introduce gas into said discharge space, said gas having a critical potential at which at etching action and a deposition action of said gas are in equilibrium;

means to control an acceleration voltage for accelerating ions in a plasma of said gas, so as to alternately etch and deposit said sample;

said means to control acceleration voltage including a grid electrode disposed in said discharge space above said sample, D.C. power source connected to said grid electrode, an output voltage controller connected to said D.C. power source, and an output waveform controller connected to said output voltage controller.

28. A plasma treating apparatus according to claim 25, wherein said means to control an acceleration voltage, comprises:

a radio frequency power connected to said lower electrode through a matching box; and

an output voltage control means connected to said radio frequency power source.

26. A plasma treating apparatus comprising:

a vacuum treating vessel having a gas injection port;

an upper electrode disposed in an upper portion of said vacuum treating vessel;

a lower electrode for supporting a sample to be treated, disposed in a lower portion of said vacuum treating vessel so as to face said upper electrode, said lower electrode being insulated from said vacuum treating vessel;

means to introduce gas into said vacuum treating vessel through said injection port, said gas having a critical potential at which an etching action and a deposition action of said gas are in equilibrium; and

means to control an acceleration voltage connected to said lower electrode for accelerating ions in a plasma of said gas, so as to alternately etch and deposit said sample.

27. A plasma treating apparatus according to claim 26, wherein said means to control an acceleration voltage, comprises:

a radio frequency power for supplying radio frequency voltage to said lower electrode, connected to said lower electrode through a matching box;

a D.C. power source for supplying D.C. voltage to said lower electrode, connected to said lower electrode through a low-pass filter;

an output voltage controller connected to said D.C. power source; and

an output waveform controller connected to said output voltage controller.

29. A plasma treating apparatus according to claim 26, wherein said means to control an acceleration voltage, comprises:

a radio frequency power source connected to said lower electrode through a synthesizer;

an A.C. waveform generator connected to said synthesizer; and

an output waveform controller connected to said A.C. waveform generator.

30. A plasma treating apparatus according to claim 26, wherein said means to control an acceleration voltage, comprises:

a radio frequency power source connected to said lower electrode through a matching box and a capacitor; and

an output voltage control means connected to said radio frequency power source.

31. A plasma treating apparatus according to claim 26, wherein said means to introduce gas includes a discharge tube connected to said injection port and a coil wound around a periphery of said discharge tube and connected to a radio frequency power source.

32. A plasma treating apparatus comprising:

a vacuum treating vessel having a gas injection port;

an upper electrode disposed in an upper portion of said vacuum treating vessel;

a lower electrode for supporting a sample to be treated, disposed in a lower portion of said vacuum treating vessel so as to face said upper electrode, said lower electrode being insulated from said vacuum treating vessel;

means to introduce gas into said vacuum treating vessel through said injection port, said gas having a critical potential at which an etching action and a deposition action of said gas are in equilibrium; and

means to control an acceleration voltage for accelerating ions in a plasma of said gas, so as to alternately etch and deposit said sample, said means to control an acceleration voltage including a grid electrode disposed in said vacuum treating vessel above said sample, a D.C. power source connected to said grid electrode, an output voltage controller connected to said D.C. power source, an output waveform controller connected to said output voltage controller, and a radio frequency power source connected to said lower electrode through a matching box.