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Ionic semiconductor materials and applications thereof

  • US 4,797,190 A
  • Filed: 10/06/1986
  • Issued: 01/10/1989
  • Est. Priority Date: 10/06/1986
  • Status: Expired due to Term
First Claim
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1. An ionic semiconductor having an ion transport rate which is temperature dependent, said semiconductor comprising an inert man-made polymeric matrix material and a hydrogel, the molecules of the hydrogel being substantially uniformly dispersed within said matrix material to form a composite structure wherein contact between hydrogel molecules is minimized by the matrix and the formation of channels is thereby limited, the composite allowing the transfer of ions and preventing the passage of un-ionized matter, the hydrogel comprising 10 to approximately 50% by weight of the dry composite, there being sufficient bonding between the hydrogel molecules and the matrix material to prevent substantial leach-out of hydrogel molecules from the composite.

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