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Semiconductor device having multilayer silicide contact system and process of fabrication thereof

  • US 4,800,177 A
  • Filed: 03/14/1986
  • Issued: 01/24/1989
  • Est. Priority Date: 03/14/1985
  • Status: Expired due to Term
First Claim
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1. A process of fabricating a semiconductor device, comprising(a) forming a heavily doped first semiconductor layer of a first conductivity type,(b) forming a first protective layer of an insulating material on said first semiconductor layer and having an opening allowing a portion of the first semiconductor layer to be exposed therethrough,(c) forming a second silicon layer partly on said first protective layer and partly on said portion of said first semiconductor layer,(d) heavily doping said second silicon layer with a dopant of a second conductivity type opposite to said first conductivity type and thereafter annealing the doped second silicon layer to form in said first semiconductor layer an active region of said second conductivity type substantially aligned with said opening with enhanced ohmic contact provided between said active region and said second silicon layer,(e) forming a substantially non-doped third silicon layer on said second silicon layer,(f) forming a second protective layer of an insulating material on said third silicon layer and having an opening allowing a portion of the third semiconductor layer to be exposed therethrough, the opening in the second protective layer being substantially aligned with the opening in said first protective layer across said second and third silicon layers,(g) forming a layer of a refractory metal partly on said second protective layer and partly on said portion of said third silicon layer,(h) heating the resultant structure to cause the refractory metal layer and the third silicon layer to react with each other for thereby forming a metal silicide layer of the refractory metal silicide,(i) forming a barrier layer of at least one metal on said metal silicide layer, and(j) forming an electrode layer including a highly conductive metal on said barrier layer.

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