Process for forming sub-micrometer patterns using silylation of resist side walls

• US 4,803,181 A
• Filed: 03/17/1987
• Issued: 02/07/1989
• Est. Priority Date: 03/27/1986
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Buchmann, Peter L., Van Zeghbroech, Bart J., Vettiger, Peter
• Primary Examiner(s): Hearn, Brian E.
• Assistant Examiner(s): NOT, DEFINED
• Application Number:
  US07/026,799
• Time in Patent Office: 693 Days
• Field of Search: 156/628, 156/643, 156/644, 156/646, 156/652, 156/651, 156/659.1, 156/668, 427/43.1, 427/40, 427/41, 430/296, 430/313, 430/325, 437/50, 437/187, 437/200, 437/228, 437/229, 437/244, 437/44, 437/962, 437/935
• US Class Current: 438/696
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal
• CPC Class Codes: Y10S 148/051 Etching
• CPC Class Codes: Y10S 148/111 Narrow masking
• CPC Class Codes: Y10S 148/137 Resists
• CPC Class Codes: Y10S 438/947 Subphotolithographic processing
• CPC Class Codes: Y10S 438/948 Radiation resist
• CPC Class Codes: Y10S 438/949 Energy beam treating radiation resist on semiconductor
• CPC Class Codes: Y10S 438/95 Multilayer mask including nonradiation sensitive layer

Abstract

A process for forming sidewalls for use in the fabrication of semiconductor structures, where the thin, vertical sidewalls are "image transferred" to define sub-micron lateral dimensions.

First, a patterned resist profile with substantially vertical edges is formed on a substrate on which the sidewalls are to be created. Then, the profile is soaked in a reactive organometallic silylation agent to silylate the top and the vertical edges of the resist to a predetermined depth, thereby rendering the profile surfaces highly oxygen etch resistant. In a subsequent anisotropic RIE process, the horizontal surfaces of the silylated profile and the unsilylated resist are removed, leaving the silylated vertical edges, that provide the desired free-standing sidewalls, essentially unaffected.

Claims

1. A low temperature process for forming sidewalls on a substrate for use in the fabrication of structures with sub-micron lateral dimensions comprising the steps of:

depositing on said substrate a layer of polymeric resist comprising active hydrogen;

patterning said resist thereby forming a profile having horizontal surfaces and substantially vertical edges;

treating the maskless resist with a reactive organometallic silylation solution comprising Xylene, HMCTS and n-Methylpyrrolidone, respectively amounting to 89, 10 and 1 volume %, at a temperature of between 15° and

25°

C., thereby silylating the exposed horizontal and vertical edges in said resist to a predetermined depth; and

anisotropic oxygen plasma etching said resist thereby removing the silylated resist at said horizontal surfaces and removing the unsilylated resist, leaving the silylated vertical edges.

2. Low temperature process for fabricating a line pattern of sub-micron dimensions on a semiconductor body, characterized in that it comprises the steps of:

depositing a film of the material from which the line pattern is to be formed on the semiconductor body;

depositing, on said film, a layer of polymeric resist comprising active hydrogen;

patterning said resist thereby forming a profile having horizontal surfaces and substantially vertical edges;

silylating the maskless resist by treating said resist with a reactive organometallic silylation solution comprising Xylene, HMCTS and n-Methylpyrrolidone, respectively amounting to 89, 10 and 1 volume %, at a temperature of between 15° and

25°

C., thereby replacing the active hydrogens with silicon atoms in the horizontal surfaces and the substantially vertical edges of the resist to a predetermined depth;

dry etching said resist thereby removing the silylated resist at said horizontal surfaces and, removing the unsilylated resist, leaving the silylated, substantially vertical edges, on said film;

anisotropically etching said film not covered by said substantially vertical edges of silylated resist; and

removing said silylated resist.

3. A process as claimed in claim 2, wherein the film from which the line pattern is to be formed consists of a metal.

4. A process as claimed in claim 3, wherein the film consists of tungsten silicide (WSi_x).

5. A process as claimed in claim 2 further comprising a step following said etching step, comprising removing selected portions of said vertical silylated resist leaving only those sidewalls corresponding to the line pattern which is to be formed in the underlying layer.

6. The process of claim 4 wherein said removing comprises selectively reactive ion etching using O₂ /10% CF₄ RIE.

7. The process of claim 2 wherein said etching of said resist comprises anisotropic etching.

8. The process of claim 2 wherein said etching of said resist comprises anisotropic etching reactive ion etching comprising oxygen.

9. The process of claim 2 wherein said etching of said resist comprises;

a first step comprising anisotropically etching said silylated resist by halogen enhanced exygen RIE; and

a second step comprising said unsilylated resist by an O₂ plasma etch.

10. The process of claim 2 wherein said first etching step is by an O₂ /10% CF₄ RIE.

11. A low temperature process for forming sidewalls on a substrate for use in the fabrication of structures having sub-micron lateral dimensions comprising the steps of:

depositing on said substrate a layer of polymeric material comprising active hydrogen;

patterning said polymeric material, said pattern having horizontal surfaces and substantially vertical surfaces;

forming a sub-micron structure in said horizontal and substantially vertical surfaces of said polymeric material by silylating said material by treating said material with a solution comprising Xylene, HMCTS and n-methylpyrrolidone, respectively amounting to 89, 10 and 1 volume %, at a temperature of between 15° and

25°

C., to a predetermined depth; and

etching said polymeric material thereby removing said sub-micron structure in said horizontal surfaces and said polymeric material and whereby said submicron structure formed in said substantially vertical surfaces remains.

12. The process of claim 11 wherein said etching of said polymeric material comprises anisotropic etching.

13. The process of claim 11 wherein said etching of said polymeric material comprises anisotropic ion etching comprising oxygen.

14. The process of claim 11 wherein said etching comprises;

a first etching step comprising anisotropically etching said silylated resist by halogen enhanced oxygen RIE; and

a second etching step comprising etching said unsilylated resist by an oxygen plasma etch.

15. The process of claim 14 wherein said first etching step is by O₂ /10% CF₄ RIE.