×

Mesfet transistor with gate spaced above source electrode by layer of air or the like method of fabricating same

  • US 4,807,002 A
  • Filed: 05/26/1988
  • Issued: 02/21/1989
  • Est. Priority Date: 01/28/1985
  • Status: Expired due to Fees
First Claim
Patent Images

1. A metal-semiconductor field effect transistor comprising:

  • (a) a semiconductor substrate;

    (b) elongated first and second electrodes contacting the substrate and spaced from each other by a first area of the substrate which has a length in the direction of elongation of said first and second electrodes; and

    (c) a control electrode in sheet form, comprising;

    (i) an elongated gate portion contacting the first area along at least a portion of the length of the first area;

    (ii) a bonding pad portion contacting a second area of the substrate situated adjacent to the first electrode, and on the opposite side of the first electrode from the first area; and

    (iii) a bridge portion bridging over the first electrode and having a first side adjoining the bonding pad portion and a second side adjoining the gate portion along substantially the entire portion of the length of the first area;

    (d) whereby resistance of the control electrode is minimized.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×