Semiconductor device having stacking structure

• US 4,807,021 A
• Filed: 03/05/1987
• Issued: 02/21/1989
• Est. Priority Date: 03/10/1986
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Okumura, Katsuya
• Primary Examiner(s): Edlow, Martin H.
• Assistant Examiner(s): Limanek, Robert P.
• Application Number:
  US07/022,371
• Time in Patent Office: 719 Days
• Field of Search: 357/75, 357/68, 357/71
• US Class Current: 257/777
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 of an individual bump connector
• CPC Class Codes: H01L 25/0652 the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A semiconductor device includes a base semiconductor structure including semiconductor elements, interconnection layers for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, at least one stacking semiconductor structure including semiconductor elements, an interconnection layer for connecting the semiconductor elements together, and conductive pads to which the interconnection layers are connected, the stacking semiconductor structure having holes selectively formed therein to expose portions of the conductive pads, first conductive elements fixed in the holes of the stacking semiconductor structure, to be electrically connected to the exposed portions of the conductive pads, and second conductive elements fixed on the conductive pads of the base semiconductor structure, and fixed to the first conductive elements, with a gap provided between the base and stacking semiconductor structures.

Claims

1. A semiconductor device comprising:

a base semiconductor structure having a flat main surface and including semiconductor elements, interelement wiring layers formed on said flat main surface for connecting said semiconductor elements together, and conductive pads provided on said main surface and connected to the interelement wiring layers;

at least one stacking semiconductor structure stacked on said base semiconductor structure, the stacking semiconductor structure having a flat main surface and a rear surface and including semiconductor elements, interelement wiring layers formed on said flat main surface for connecting said semiconductor elements together, conductive pads provided on said main surface for connection to the interelement wiring layer, and holes selectively formed at said rear surface of said stacking semiconductor structure to expose portions of rear surfaces of said conductive pads;

first conductive elements fixed in said holes of said stacking semiconductor structure for direct connection to the exposed rear surface portions of said conductive pads; and

second conductive elements fixed on said conductive pads of said base semiconductor structure and fixed on said first conductive elements to produce a gap between said base and said at least one stacking semiconductor structure.

2. A device according to claim 1 further comprising:

at least one additional stacking semiconductor structure including semiconductor elements, interelement wiring layers for connecting said semiconductor elements together, and conductive pads to which said wiring layers are connected, holes being selectively formed in said additional stacking semiconductor structure, to expose portions of said conductive pads;

third conductive elements fixed in holes of said additional stacking semiconductor structure, to be electrically connected to the exposed portions of said conductive pads; and

fourth conductive elements selectively fixed on said conductive pads of said additional stacking semiconductor structure, and fixed and electrically coupled to said third conductive elements, with a gap provided between said stacking semiconductor structure and said additional semiconductor structure.

3. A device according to claim 2, wherein said first and third conductive elements are spherical particles respectively having diameters substantially the same as thicknesses of said stacking semiconductor structure and said additional semiconductor structure.

4. A device according to claim 3, wherein said spherical particle is formed of one of Al, Cu, and Au.

5. A device according to claim 3, wherein said spherical particle is formed of a spherical body and a conductive layer formed thereon.

6. A device according to claim 2, wherein each of said first and third conductive elements has a conductive member, with an insulating member formed on the side surface of said conductive member.

7. A device according to claim 6, wherein said conductive member is formed of one of Al, Cu, and Au.

8. A device according to claim 2, further comprising an insulating member formed to hold said first and third conductive elements in holes of said stacking semiconductor structure and said additional semiconductor structure.

9. A device according to claim 1, further comprising an insulating member formed to hold said first conductive elements in holes of said stacking semiconductor structure.

10. A device according to claim 1, wherein said first conductive elements are spherical particles each having a diameter substantially the same as a thickness of said stacking semiconductor structure.

11. A device according to claim 10, wherein said spherical particle is formed of one of Al, Cu and Au.

12. A device according to claim 10, wherein said spherical particle is formed of a spherical body and a conductive layer formed thereon.

13. A device according to claim 1, wherein each of said first conductive elements has a conductive member, with an insulating member formed on the side surface, of said conductive member.

14. A device according to claim 13, wherein said conductive member is formed of one of Al, Cu and Au.