Light valve system and method with pulsed readout

• US 4,807,976 A
• Filed: 04/01/1987
• Issued: 02/28/1989
• Est. Priority Date: 04/01/1987
• Status: Expired due to Fees

• Current Assignee: JVC Americas Corporation (JVC Kenwood Corporation)
• Original Assignee: Hughes Aircraft Company (Rtx Corporation)
• Inventors: Owechko, Yuri, Little, Michael J., Efron, Uzi, Schwartz, Robert N., Braatz, Paul O., Welkowsky, Murray S.
• Primary Examiner(s): LaRoche, Eugene R.
• Assistant Examiner(s): McCutheon, Nathan W.
• Application Number:
  US07/033,319
• Time in Patent Office: 699 Days
• Field of Search: 350/355, 350/356, 350/342, 350/392, 350/386
• US Class Current: 359/318
• CPC Class Codes: G02F 1/133348 Charged particles addressed liquid crystal cells, e.g. controlled by an electron beam
• CPC Class Codes: G02F 1/135 Liquid crystal cells structurally associated with a photoconducting or a ferro-electric layer, the properties of which can be optically or electrically varied G02F1/133348 takes precedence

Abstract

A pulsed readout technique is described for liquid crystal light valves which eliminates the problem of readout beam leakage through the light valve mirror. The readout beam is pulsed on only when the light valve'"'"'s semiconductor layer is out of a depletion state. This can occur during an accumulation state or, in certain applications, during a specially inserted quiescent period in the light valve voltage cycle. The invention is applicable to light valves with various types of modulating inputs, and can be used with either dielectric or metal matrix mirrors.

Claims

1. A light valve system, comprising:

a light valve adapted to spatially modulate a readout beam in accordance with an applied input signal, the light valve including a layer of semiconductor material which produces a spatial voltage pattern in response to the input signal, the semiconductor material being capable of operation in alternating accumulation and depletion mode, an oxide layer adjacent aid semiconductor material, a reflective mirror adjacent said oxide layer for reflecting the readout beam, and a layer of electro-optic material adjacent said reflective mirror, the electro-optic material for receiving the voltage pattern from the semiconductor layer and spatially modulating the readout beam in response to said voltage pattern,

means for applying an alternating voltage signal to operate the light valve with the semiconductor material in alternating repletion and accumulation modes, and

means for interrogating the light valve with a pulsed readout beam applied in synchronization with the applied alternating voltage so that the light valve is interrogated substantially only during accumulation modes, thereby mitigating the effect of readout beam leakage into the semiconductor material.

2. The light valve system of claim 1, wherein said means for applying the alternating voltage operates the light valve in accumulation modes which are longer than the intervening depletion modes.

9. The light valve system of claim 1, including a pair of transparent electrodes which sandwich the semiconductor material and electro-optic layer, and wherein the semiconductor material is a photoconductor, and the means for applying an alternating voltage signal operates the light valve with the photoconductor in an accumulation mode for longer periods of time than in a depletion mode.

10. The light valve system of claim 9, wherein an insulative oxide layer is disposed between the photoconductor and the transparent electrode adjacent to the photoconductor.

11. The light valve system of claim 9 wherein said mirror comprises a metal matrix mirror.

3. A light valve system, comprising:

a light valve adapted to spatially modulate a readout beam in accordance with an applied input signal, the light valve including a layer of semiconductor material which produces a spatial voltage pattern in response to the input signal, the semiconductor material being capable of operating in a depletion mode, and a layer of electro-optic material which receives the voltage pattern from the semiconductor layer and spatially modulates the readout beam in response to said voltage pattern;

voltage applying means for applying an alternating voltage signal to operate the light valve with the semiconductor layer in time-spaced depletion periods, wherein the voltage applying means is adapted to operate the light valve in a cyclical pattern with the semiconductor material in depletion, accumulation and substantially quiescent periods during each cycle, and

interrogating means for interrogating the light valve with a pulsed readout beam substantially only between depletion periods during the quiescent period thereby mitigating the effect of readout beam leakage into the semiconductor layer.

4. The light valve system of claim 3, wherein the voltage applying means is adapted to apply voltages of opposite polarity to the light valve during the depletion and accumulation periods, respectively, and a substantially zero voltage during the quiescent periods, and the interrogating means is adapted to apply a readout beam to the light valve substantially only during the quiescent period of each cycle.

5. The light valve system of claim 3, wherein the voltage applying means is adapted to establish the quiescent period of each cycle during an interval of the depletion period which is time-spaced from the accumulation period.

6. The light valve system of claim 3, wherein the voltage applying means is adapted to establish the quiescent period of each cycle between depletion and accumulation periods.

7. The light valve system of claim 3, wherein the voltage applying means is adapted to establish a quiescent period of each cycle which is longer in duration than the accumulation period but shorter than the depletion period.

8. The light valve system of claim 7, wherein the quiescent period of each cycle is about 250-2,500 microseconds.

12. A light valve system, comprising:

a light valve adapted to spatially modulate a readout beam in accordance with an applied input signal, the light valve including;

a semiconductor layer which produces a spatial voltage pattern in response to the input signal, said semiconductor layer formed from a photoconductor material and adapted to receive an input optical beam and capable of operating in a depletion mode;

an electro-optic layer of electro-optic material which receives the voltage pattern from the semiconductor layer and spatially modulates the readout beam in response to the voltage pattern;

a pair of transparent electrodes sandwiching said electro-optic layer and said semiconductor layer, said pair connected so as to receive the applied voltage, wherein one transparent electrode of said air is in direct contact with the semiconductor layer and forms a first Schottky contact therewith; and

a metal matrix mirror on the readout side of said semiconductor layer for reflecting readout radiation, the metal matrix mirror forming a series of second Schottky contacts with the semiconductor layer;

voltage applying means for applying an alternating voltage signal across the electrodes to operate the light valve with the semiconductor layer in time-spaced depletion periods, with substantially equal positive and negative voltage pulses separated by quiescent periods, and

interrogating means for interrogating the light vlave with a pulsed readout beam substantially only between depletion periods during said quiescent periods, thereby mitigating the effect of readout beam leakage into the semiconductor layer.

13. A light valve system comprising:

a light valve adapted to spatially modulate a readout beam in accordance with an applied input signal, the light vlave including;

a layer of semiconductor material which produces a spatial voltage pattern in response to the input signal, the semiconductor material being capable of operating in a depletion mode;

a layer of electro-optic material which receives the voltage pattern from the semiconductor layer and spatially modulates the readout beam in response to said voltage pattern;

an input charge-coupled device array adapted to receive an input electrical signal, and

a mirror which reflects a readout beam transmitted through the electro-optic layer back through said electro-optic layer, the semiconductor layer modulating the electro-optic layer in response to the data in the CCD array;

voltage applying means for applying a cyclical operating voltage to the light valve to operate the light valve with the semiconductor material in time-spaced depletion periods with depletion, accumulation and quiescent periods during each voltage cycle, and

interrogating means for interrogating the light valve with a pulsed readout beam substantially only between depletion periods during the quiescent period of each cycle, thereby mitigating the effect of readout beam leakage into the semiconductor layer.

14. The light valve system of claim 13, wherein the mirror comprises a metal matrix mirror.

15. The light valve system of claim 13, wherein the electro-optic material consists of nematic liquid crystals.

17. The light valve system of claim 13, wherein the voltage applying means is responsive to the interrogating means to coordinate the operating voltage with the readout beam.

16. The light valve system of clam 13, wherein the interrogating means is responsive to the operating voltage applied to the light valve to control the readout beam.

18. A method of operating a light valve, the light valve including a layer of semiconductor material which produces a spatial voltage pattern in response to the input signal, the semiconductor material being capable of operation in alternating accumulation and depletion mode, an oxide layer adjacent said semiconductor material, a reflective mirror adjacent said oxide layer for reflecting a readout beam, and a layer of electro-optic material for receiving the voltage pattern from the semiconductor layer and spatially modulating the readout beam in response to said voltage pattern, the method comprising:

applying a voltage signal to operate the light valve in alternating accumulation and depletion modes, and

interrogating the light valve with a pulsed readout beam substantially only during accumulation modes.

19. The method of claim 18, wherein the operating voltage operates the light valve in accumulation modes which are longer than the intervening depletion modes.

20. A method of operating a light valve including a layer of semiconductor material which produces a spatial voltage pattern in response to an input signal, and a layer of electro-optic material which receives the voltage pattern form the semiconductor layer and spatially modulates a readout beam in response thereto, comprising:

applying an operating voltage signal to operate the light valve in a cyclical pattern with the semiconductor material in depletion, accumulation and substantially quiescent periods during each cycle, and

interrogating the light valve with a pulsed readout beam substantially only during the quiescent period of each cycle between depletion periods, thereby mitigating the effect of readout beam leakage into he semiconductor layer.

21. The method of claim 20, wherein operating voltages of opposite polarities are applied to the light valve during the depletion and accumulation periods, a substantially zero voltage is applied to the light valve during the quiescent periods, and the light valve is interrogated by the readout beam substantially only during the quiescent period of each cycle.

22. The method of claim 20, wherein the operating voltage establishes the quiescent period of each cycle during an interval of the depletion period which is time-spaced from the accumulation period.

23. The method of claim 20, wherein the operating voltage establishes the quiescent period of each cycle between depletion and accumulation periods.

24. The method of claim 20, wherein the operating voltage establishes a quiescent period of each cycle which is longer in duration than the accumulation period but shorter than the depletion period.

25. The method of claim 24, wherein the quiescent period of each cycle is about 250-2,500 microseconds.

26. The method of claim 20, wherein the light valve includes an input charge-coupled device (CCD) array adapted to receive an input electrical signal, and a mirror which reflects a readout beam transmitted through the electro-optic layer back through the electro-optic layer, and wherein the electro-optic layer is modulated by the semiconductor layer in response to the data in the CCD array.

27. The method of claim 26 wherein the electro-optic material consists of nematic liquid crystals.

28. The method of claim 26 wherein the interrogation of the light valve with a readout beam is controlled in response to the operating voltage applied to the light valve.

29. The method of claim 26, wherein the operating voltage is controlled in response to the interrogation of the light valve with a readout beam, to coordinate the operating voltage with the beam.

30. A light valve system comprising:

a liquid crystals light valve including a layer of semiconductor material and operable continually in a depletion mode;

means for cyclically applying symmetric voltage pulses of opposite polarity to operate the liquid crystal light valve with substantially zero voltage applied between the pulses;

means for applying a pulsed readout beam to interrogate the light valve substantially only during the zero voltage period of each cycle, thereby mitigating the effect of readout beam leakage into semiconductor material.