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Vapor phase photoresist silylation process

  • US 4,808,511 A
  • Filed: 05/19/1987
  • Issued: 02/28/1989
  • Est. Priority Date: 05/19/1987
  • Status: Expired due to Fees
First Claim
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1. A vapor phase photoresist silylation process comprising the steps of:

  • coating a substrate with a photoresist film that contains a masked reactive functionality;

    imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film;

    treating said exposed film with a silylating agent having the formula SiR4 wherein one of said R groups is an acetate group;

    and developing the resulting image by RIE to obtain a negative tone relief image.

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