Vapor phase photoresist silylation process

• US 4,808,511 A
• Filed: 05/19/1987
• Issued: 02/28/1989
• Est. Priority Date: 05/19/1987
• Status: Expired due to Fees

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Holmes, Steven J.
• Primary Examiner(s): Dees, Jose G.
• Application Number:
  US07/051,354
• Time in Patent Office: 651 Days
• Field of Search: 430/325, 430/326, 430/330, 430/323, 156/628, 156/643
• US Class Current: 430/325
• CPC Class Codes: G03F 7/038 Macromolecular compounds which are rendered insoluble or differentially wettable G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021
• CPC Class Codes: G03F 7/0755 Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds G03F7/0752 takes precedence
• CPC Class Codes: G03F 7/265 Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal
• CPC Class Codes: Y10S 438/948 Radiation resist

Abstract

A process for improved vapor phase silylation of photoresist is disclosed. The process uses silylation materials which either produce a strong base such as dimethylamine upon reaction with a resist film or which contain an improved chemical leaving group such as acetate. The process is effective at temperatures of 135 C. and below. Preferred silylation materials are N,N-dimethylaminotrimethylsilane and trimethylsilylacetate.

Claims

1. A vapor phase photoresist silylation process comprising the steps of:

coating a substrate with a photoresist film that contains a masked reactive functionality;

imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film;

treating said exposed film with a silylating agent having the formula SiR₄ wherein one of said R groups is an acetate group;

and developing the resulting image by RIE to obtain a negative tone relief image.

2. A vapor phase photoresist silylation process comprising the steps of:

coating a substrate with a photoresist film that contains a masked reactive functionality;

imagewise exposing said film to radiation under conditions that cause unmasking of the reactive functionality in the exposed regions of the film;

treating said exposed film with a silylating agent, wherein said silylating agent is trimethylsilylacetate; and

developing the resulting image by RIE to obtain a negative tone relief image.

3. The process according to claim 2 wherein said photoresist is poly(t-butoxycarbonyloxystyrene).