High voltage pulse generating semiconductor circuit with improved driving arrangement

• US 4,808,845 A
• Filed: 12/02/1986
• Issued: 02/28/1989
• Est. Priority Date: 12/02/1985
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Izaki, Naoyuki, Suzuki, Masayoshi
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): Duong, Tai V.
• Application Number:
  US06/937,051
• Time in Patent Office: 819 Days
• Field of Search: 307/264, 307/255, 307/270, 307/446, 307/570, 307/300, 307/542, 307/544, 307/552, 307/558, 307/559, 307/564, 307/304
• US Class Current: 326/84
• CPC Class Codes: H03K 17/10 Modifications for increasing the maximum permissible switched voltage
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/667 using complementary bipolar transistors

Abstract

A semiconductor electronic circuit, which can generate high voltage pulses, includes a current source coupled to form a series circuit with a pair of impedances between first and second voltage source terminals. A driving source is connected with a control terminal of the current source. Output voltage-current characteristics of the driving source are such that its output current is almost 0, when the output voltage is in the proximity of 0 V and that it is not 0 for other voltages. Thus, the voltage at the control terminal of the current source is clamped at a predetermined voltage level determined by the circuit structure of the driving source, when the voltage at the output terminal is lower than the predetermined voltage.

Claims

1. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between a first voltage source terminal having a first voltage level applied thereto and a second voltage source terminal having a second voltage level applied thereto;

drive means having an input terminal and coupled

to drive said current source means, said drive means

including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltage within a prdetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means; and

means for applying a clamp voltage to said transistor circuit means, said clamp voltage being at a voltage level between the first and second voltage levels applied to said first and second voltage source terminals, an input signal to the semiconductor electronic circuit being applied across said input terminal of said drive means and said clamp voltage applying means so that the input signal is superposed on said clamp voltage and so that the voltage of the output of said drive means applied to said current source is clamped to

said clamp voltage depending upon said characteristics of said drive means.

2. A semiconductor electronic circuit according to claim 1, wherein the current source includes a transistor coupled to have a conductive path in said series circuit between the first and second impedance means.

3. A semiconductor electronic circuit according to claim 2, wherein said impedance means are resistors.

4. A semiconductor electronic circuit according to claim 1, wherein said impedance means are active elements.

5. A semiconductor electronic circuit according to claim 4, wherein said active elements include transistors.

6. A semiconductor electronic circuit according to claim 1, wherein said transistor circuit means comprises a transistor coupled between said input signal and said current source means.

7. A semiconductor electronic circuit according to claim 2, wherein said transistor circuit means comprises a transistor coupled between said input signal and the transistor of said current source.

8. A semiconductor electronic circuit according to claim 2, wherein said transistor is an FET.

9. A semiconductor electronic circuit according to claim 5, wherein said transistors are FETs.

10. A semiconductor electronic circuit according to claim 6, wherein said transistor is an FET.

11. A semiconductor electronic circuit according to claim 1, wherein said current source includes at least one bipolar transistor coupled to have a collector-emitter path in said series circuit to be in series with said first and second impedance means, and wherein said transistor circuit means includes at least one FET having a source-drain path coupled to the base of said bipolar transistor of the current source and having a gate coupled to receive said input signal.

12. A semiconductor electronic circuit according to claim 11, wherein said first and second impedance means are bipolar transistors each having collector-emitter paths in said series circuit to be in series with the collector-emitter path of said bipolar transistor of said current source.

13. A semiconductor electronic circuit according to claim 1, wherein the output current-output voltage characteristics of the drive means is such that the output current is substantially zero for both positive and negative output voltages within said predetermined vicinity of zero output voltage, and wherein the output current is not zero for both positive and negative output voltages outside said predetermined vicinity of zero output voltage.

14. A semiconductor electronic circuit according to claim 1, wherein said current source

is composed of bipolar transistors coupled in said series circuit and said transistor circuit means includes field effect transistors coupled to said bipolar transistors.

15. A semiconductor electronic circuit according to claim 1, wherein said clamp applying means voltage is located in the proximity of a connection point between said current source and said drive means.

16. A semiconductor electronic circuit according to claim 1, wherein a plurality of input terminals are provided to receive input pulses for said drive means and wherein pulses at different input terminals have different delay times.

17. A semiconductor electronic circuit according to claim 1, wherein said transistor circuit means comprises a bipolar transistor having a base coupled to receive the input signal, a collector coupled to receive the clamp voltage and an emitter coupled to the current source means to provide the output of the drive means to the current source means.

18. A semiconductor electronic circuit according to claim 17, wherein said clamp voltage is set at substantially 0 volts.

19. A semiconductor electronic circuit according to claim 1, wherein said transistor circuit means comprises a field effect transistor having a gate coupled to receive the input signal, wherein said field effect transistor has a source-drain path coupled between the clamp voltage applying means and the current source means.

20. A semiconductor electronic circuit according to claim 19, wherein said clamp voltage is set at substantially 0 volts.

21. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between first and second voltage source terminals; and

drive means coupled to receive an input signal and to provide an output to drive said current source means, said drive means including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltages within a predetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means,

wherein the voltage of the output of said drive means applied to said current source is clamped to a predetermined voltage depending upon said characteristics of said drive means, and further

wherein said current source is composed of bipolar transistors coupled in said series circuit and said transistor circuit means includes field effect transistors coupled to said bipolar transistors.

22. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between first and second voltage source terminals; and

drive means coupled to receive an input signal and to provide an output to drive said current source means, said drive means including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltages within a predetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means,

wherein the voltage of the output of said drive means applied to said current source is clamped to a predetermined voltage depending upon said characteristics of said drive means, and further

wherein a plurality of input terminals are provided to receive input pulses for said drive means and wherein pulses at different input terminals have different delay times.

23. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between first and second voltage source terminals; and

drive means coupled to receive an input signal and to provide an output to drive said current source means, said drive means including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltages within a predetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means,

wherein the voltage of the output of said drive means applied to said current source is clamped to a predetermined voltage depending upon said characteristics of said drive means, and further

wherein said impedance means are active elements.

24. A semiconductor electronic circuit according to claim 23, wherein said active elements include transistors.

25. A semiconductor electronic circuit according to claim 24, wherein said transistors are FETs.

26. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between first and second voltage source terminals; and

drive means coupled to receive an input signal and to provide an output to drive said current source means, said drive means including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltages within a predetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means,

wherein the voltage of the output of said drive means applied to said current source is clamped to a predetermined voltage depending upon said characteristics of said drive means, and further

wherein said current source includes at least one bipolar transistor coupled to have a collector-emitter path in said series circuit to be in series with said first and second impedance means, and wherein said transistor circuit means includes at least one FET having a source-drain path coupled to the base of said bipolar transistor of the current source and having a gate coupled to receive said input signal.

27. A semiconductor electronic circuit according to claim 26, wherein said first and second impedance means are bipolar transistors each having collector-emitter paths in said series circuit to be in series with the collector-emitter path of said bipolar transistor of said current source.

28. A semiconductor electronic circuit comprising:

first and second impedance means;

current source means coupled between said first and second impedance means so that said current source means and said first and second impedance means constitute a series circuit, said series circuit being coupled between first and second voltage source terminals; and

drive means coupled to receive an input signal and to provide an output to drive said current source means, said drive means including transistor circuit means possessing output current-output voltage characteristics for the drive means such that an output current of said drive means is substantially zero for a zero output voltage or for output voltages within a predetermined vicinity of a zero output voltage, and is not zero for output voltages other than zero voltage or voltages not in the predetermined vicinity of a zero output voltage, wherein the output of said semiconductor electronic circuit is derived from one end of said current source means,

wherein the voltage of the output of said drive means applied to said current source is clamped to a predetermined voltage depending upon said characteristics of said drive means, and further

wherein the output current-output voltage characteristics of the drive means is such that the output current is substantially zero for both positive and negative output voltages within said predetermined vicinity of zero output voltage, and wherein the output current is not zero for both positive and negative output voltage outside said predetermined vicinity of zero output voltage.