Read only memory device with memory cells each storing one of three states

• US 4,809,224 A
• Filed: 08/07/1987
• Issued: 02/28/1989
• Est. Priority Date: 08/08/1986
• Status: Expired due to Term

• Current Assignee: Fujitsu Limited
• Original Assignee: Fujitsu Limited
• Inventors: Hirao, Hiroshi, Suzuki, Yasuo, Suzuki, Yasuaki
• Primary Examiner(s): Hecker, Stuart N.
• Assistant Examiner(s): Bowler, Alyssa H.
• Application Number:
  US07/082,696
• Time in Patent Office: 571 Days
• Field of Search: 365/45, 365/168, 365/94, 365/103, 365/189, 365/207, 365/208
• US Class Current: 365/94
• CPC Class Codes: G11C 11/5692 read-only digital stores using storage elements with more than two stable states

Abstract

A ROM device includes a plurality of memory cells each storing one of three states, a cell voltage generating circuit for providing a cell voltage corresponding to the state stored in a selected one of the memory cells, and a reference cell for providing a reference voltage which is substantially the same as the cell voltage provided by a memory cell storing an intermediate state of the three states. The ROM also includes a comparator circuit for generating a logical output signal based on the result of a comparison between the cell voltage and the reference voltage.

Claims

1. A read only memory device comprising:

a plurality of memory cells each storing one of three states;

a cell voltage generating circuit connected to said plurality of memory cells for providing a cell voltage corresponding to the state stored in a selected one of said plurality of memory cells;

a reference cell provided for said plurality of memory cells for providing a reference voltage which is substantially the same as the cell voltage provided by a memory cell storing an intermediate state of the three states; and

a comparator circuit connected to said cell voltage generating circuit and said reference cell for generating a logical output signal based on the result of a comparison between the cell voltage and the reference voltage.

2. A read only memory device according to claim 1, wherein said memory cells comprise memory cell transistors, and said three states of said memory cells transistors are realized by changing the effective gate width of said memory cell transistors.

3. A read only memory according to claim 1, wherein said comparator circuit comprises:

a first load transistor and a second load transistor each connected to a voltage source;

a first switching transistor connected between said first load transistor and said cell level voltage generating circuit and controlled by said reference voltage; and

a second switching transistor connected to said second load transistor and controlled by the cell voltage.

4. A read only memory according to claim 1, further comprising a decoding circuit connected to said cell level voltage generator circuit, said reference cell, and said comparator circuit for producing decoder output signals corresponding to three states stored in said memory cells.

5. A memory cell according to claim 4, wherein said decoding circuit is constituted by a combination of differential amplifiers, inverters, and a NOR gate.