Oxide deposition method
First Claim
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1. A method for depositing a thin film of silicon oxides, comprising the steps of:
- (a) providing a substrate on which the thin film of oxides is to be deposited;
(b) heating said substrate to a temperature in the range between 700°
C. and 950°
C.;
(c) passing a gas flow over said substrate,said gas flow including a silicon bearing component and an oxidizing component,wherein the atomic ratio of silicon to oxygen in said gas flow is greater than one.
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Abstract
Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.
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Citations
22 Claims
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1. A method for depositing a thin film of silicon oxides, comprising the steps of:
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(a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 700°
C. and 950°
C.;(c) passing a gas flow over said substrate, said gas flow including a silicon bearing component and an oxidizing component, wherein the atomic ratio of silicon to oxygen in said gas flow is greater than one. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for depositing a thin film of silicon oxides, comprising the steps of:
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(a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 725°
C. and 950°
C. inclusive;(c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a silicon bearing component and an oxidizing component (said silicon bearing component consisting essentially of one or more chlorinated silanes), wherein the atomic ratio of available silicon atoms in said gas flow to available oxygen atoms in said gas flow is greater than one. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method for depositing a thin film of silicon oxides, comprising the steps of:
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(a) providing a substrate on which the thin film of oxides is to be deposited; (b) heating said substrate to a temperature in the range between 700°
C. and 900°
C. inclusive;(c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr, said gas flow including a chlorosilane and nitrous oxide, said chlorosilane being selected from the group consisting of dichlorosilane, trichlorosilane, and mixtures thereof, wherein said chlorosilane is flowed at a greater volume than said nitrous oxide. - View Dependent Claims (18)
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19. A method for fabricating trench capacitors, comprising the steps of:
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(a) providing a substrate having a semiconducting upper portion; (b) etching into said substrate a trench having a depth more than four times its width; (c) depositing an oxide on the sidewalls of said trench, said oxide being deposited by heating said substrate to a temperature between 700°
C. and 950°
C., andpassing over said substrate at low pressure a gas mixture including halosilanes and an oxygen source, and including a larger atomic fraction of silicon than of oxygen; (d) and depositing a conductive material into said trench to define a capacitor plate which is insulated with respect to said substrate. - View Dependent Claims (20, 21, 22)
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Specification