Oxide deposition method

• US 4,810,673 A
• Filed: 09/18/1986
• Issued: 03/07/1989
• Est. Priority Date: 09/18/1986
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Freeman, Dean W.
• Primary Examiner(s): Hearn, Brian F.
• Assistant Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US06/908,835
• Time in Patent Office: 901 Days
• Field of Search: 437/238, 437/239, 437/243, 437/244, 148/DIG. 27, 148/DIG. 118, 427/255.2, 427/255.3, 357/23.6
• US Class Current: 438/386
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 29/66181 Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
• CPC Class Codes: Y10S 148/027 Dichlorosilane
• CPC Class Codes: Y10S 148/118 Oxide films

Abstract

Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.

Claims

1. A method for depositing a thin film of silicon oxides, comprising the steps of:

(a) providing a substrate on which the thin film of oxides is to be deposited;

(b) heating said substrate to a temperature in the range between 700°

C. and 950°

C.;

(c) passing a gas flow over said substrate,

said gas flow including a silicon bearing component and an oxidizing component,

wherein the atomic ratio of silicon to oxygen in said gas flow is greater than one.

2. The method of claim 1, wherein said substrate is heated to a temperature in the range between 850°

C. and 900°

C. inclusive.

3. The method of claim 1, wherein said gas flow has a total pressure less than 1500 milliTorr.

4. The method of claim 1, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1500 milliTorr inclusive.

5. The method of claim 1, wherein said oxidizing component consists essentially of nitrous oxide.

6. The method of claim 1, wherein said silicon bearing component consists essentially of one or more halated silanes.

7. The method of claim 1, wherein said silicon bearing component is selected from the group consisting of dichlorosilane and trichlorosilane.

8. The method of claim 1, wherein said silicon bearing component consists essentially of dichlorosilane.

9. The method of claim 1, wherein said substrate is heated in a furnace having a thermal gradient in the neighborhood of 10 degrees C. per meter.

10. The method of claim 1, wherein said silicon bearing component is flowed at a rate between 10 and 100 standard cubic centimeters per minute (sccm), and said oxidizing component is flowed at a rate which is smaller than the flow rate of said silicon bearing component.

11. A method for depositing a thin film of silicon oxides, comprising the steps of:

(a) providing a substrate on which the thin film of oxides is to be deposited;

(b) heating said substrate to a temperature in the range between 725°

C. and 950°

C. inclusive;

(c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr,

said gas flow including a silicon bearing component and an oxidizing component (said silicon bearing component consisting essentially of one or more chlorinated silanes),

wherein the atomic ratio of available silicon atoms in said gas flow to available oxygen atoms in said gas flow is greater than one.

12. The method of claim 11, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1000 milliTorr inclusive.

13. The method of claim 11, wherein said oxidizing component consists essentially of nitrous oxide.

14. The method of claim 11, wherein said oxidizing component consists essentially of nitrous oxide, and wherein said silicon bearing component is selected from the group consisting of monochlorosilane, dichlorosilane, trichlorosilane, and mixtures thereof.

15. The method of claim 11, wherein said silicon bearing component is selected from the group consisting of dichlorosilane and trichlorosilane.

16. The method of claim 11, wherein said silicon bearing component consists essentially of dichlorosilane, and said oxidizing component consists essentially of an oxide of nitrogen.

17. A method for depositing a thin film of silicon oxides, comprising the steps of:

(a) providing a substrate on which the thin film of oxides is to be deposited;

(b) heating said substrate to a temperature in the range between 700°

C. and 900°

C. inclusive;

(c) passing a gas flow over said substrate at a total pressure less than 1000 milliTorr,

said gas flow including a chlorosilane and nitrous oxide, said chlorosilane being selected from the group consisting of dichlorosilane, trichlorosilane, and mixtures thereof,

wherein said chlorosilane is flowed at a greater volume than said nitrous oxide.

18. The method of claim 17, wherein said gas flow has a total pressure in the range between 150 milliTorr and 1500 milliTorr inclusive.

19. A method for fabricating trench capacitors, comprising the steps of:

(a) providing a substrate having a semiconducting upper portion;

(b) etching into said substrate a trench having a depth more than four times its width;

(c) depositing an oxide on the sidewalls of said trench, said oxide being deposited by

heating said substrate to a temperature between 700°

C. and 950°

C., and

passing over said substrate at low pressure a gas mixture including halosilanes and an oxygen source, and including a larger atomic fraction of silicon than of oxygen;

(d) and depositing a conductive material into said trench to define a capacitor plate which is insulated with respect to said substrate.

20. The method of claim 19, wherein said conductive material consists essentially of polycrystalline silicon.

21. The method of claim 19, wherein said substrate is an epitaxial structure, and the portion of said substrate next to the bottom of said trench is doped to a concentration of greater than 1E17 cm^-3.

22. The method of claim 21, wherein said portion of said substrate next to the bottom of said trench is doped p-type.