Method for executing a reproducible glow discharge
First Claim
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1. Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressure of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of a Cu2-x S/CdS thin film semiconductor solar cell with 0≦
- x≦
1, in which the Cu2-x S layer is exposed to a glow discharge process in a hydrogen atmosphere, which includes the steps of;
(a) reduction by the glow discharge of Cu2-z O with 0≦
z≦
1 present on the Cu2-x S layer and of excess sulphur ions from the Cu2-x S layer until a highly stoichiometric Cu2.0000 S layer is produced;
(b) formation of an inversion layer on and from the highly stoichiometric Cu2.0000 S layer by way of adsorption of negatively charged hydrogen atoms (H- ions) from the hydrogen atmosphere of the glow discharge; and
(c) reduction of the free surface of the inversion layer to elemental copper.
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Abstract
In order to be able to check whether or not a glow procedure is executed properly, i.e. reproducibly, the temporal course of the formation of characteristic stable reaction products is traced mass spectrometrically.
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Citations
9 Claims
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1. Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressure of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of a Cu2-x S/CdS thin film semiconductor solar cell with 0≦
- x≦
1, in which the Cu2-x S layer is exposed to a glow discharge process in a hydrogen atmosphere, which includes the steps of;(a) reduction by the glow discharge of Cu2-z O with 0≦
z≦
1 present on the Cu2-x S layer and of excess sulphur ions from the Cu2-x S layer until a highly stoichiometric Cu2.0000 S layer is produced;(b) formation of an inversion layer on and from the highly stoichiometric Cu2.0000 S layer by way of adsorption of negatively charged hydrogen atoms (H- ions) from the hydrogen atmosphere of the glow discharge; and (c) reduction of the free surface of the inversion layer to elemental copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. Method for the execution of a reproducible glow discharge process by tracing mass spectrometrically the temporal course of the partial pressures of volatile stable reaction products in the plasma with a reactant located in a glow discharge column for the manufacture of thin film semeconductors, wherein the temporal course of characteristic volatile hydrogen products of said semiconductors is traced and wherein the semiconductor material is SnO2 or CuInSe2.
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