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Via connection with thin resistivity layer

  • US 4,812,419 A
  • Filed: 04/30/1987
  • Issued: 03/14/1989
  • Est. Priority Date: 04/30/1987
  • Status: Expired due to Fees
First Claim
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1. A method of forming via connections in an integrated circuit comprising,forming a first level of first electrically conductive lines connected to individual circuit elements on a semiconductor chip,applying a layer of insulative material on said first level,creating a plurality of holes in said layer of insulative material, said holes being formed over and exposing portions of said first electrically conductive lines,depositing a thin layer of electrically conductive material in said holes, said thin layer contacting said first conductive lines, said thin layer characterized by a resistivity in a range from about 10 to about 50 times a resistivity of said first conductive lines and a thinness in a range of between 50 nanometers and 100 nanometers, andforming a second level of second electrically conductive lines, said second lines extending into said holes into contact with said thin layer, said second lines having a resistivity which is approximately equal to said resistivity of said first lines,whereby said thin layer of electrically conductive material in said holes determines local current density of a current conducted through said holes between said first lines to said second lines.

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