Method of forming resist pattern on substrate

• US 4,814,244 A
• Filed: 02/24/1988
• Issued: 03/21/1989
• Est. Priority Date: 02/24/1987
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Koguchi, Toshio, Kinoshita, Haruo
• Primary Examiner(s): Dees, Jose G.
• Application Number:
  US07/159,687
• Time in Patent Office: 391 Days
• Field of Search: 430/5, 430/30, 430/296, 430/311, 430/325, 430/326, 430/328, 430/329, 430/942, 437/229, 250/492.21, 250/492.3, 156/643
• US Class Current: 430/30
• CPC Class Codes: G03F 7/2024 of the already developed image
• CPC Class Codes: Y10S 438/949 Energy beam treating radiation resist on semiconductor

Abstract

A method of forming resist pattern is disclosed. After the resist pattern is formed, an ion beam is irradiated on the resist pattern. The energy of the ion beam is controlled in every segments of the resist pattern by a predicted deviation data stored beforehand, so that the unfavorable deviation of the resist pattern is minimized.

Claims

1. A method of forming resist pattern on a substrate comprising steps of forming a layer to be selectively etched on one major surface of a substrate, coating the surface of said layer with a resist film, selectively exposing said resist film, developing said resist film to form a resist pattern, and irradiating an ion beam on said resist pattern, the energy of said ion beam being changed at every segment areas of said resist pattern on the basis of predicted deviation distribution data of the resist pattern so that the deviation of said resist pattern is minimized.

2. A method of claim 1, in which said predicted deviation distribution data is obtained by examination results for the deviations in a resist pattern caused by coating and developing said resist film.

3. A method of claim 1, in which said predicted deviation distribution data is obtained by examination results for the deviations in a resist pattern caused by coating, selectively exposing and developing said resist film.

4. A method of claim 3, in which said selectively exposing said resist film is conducted through an electron beam exposure method.

5. A method of claim 1, in which said layer is made of metal and/or metal oxide to form an opaque pattern of a mask, and said substrate is a glass substrate of said mask.

6. A method of claim 1, in which said layer is made of conductive material, and said substrate is a semiconductor wafer.

7. A method of claim 1, in which said layer includes an insulating layer, and said substrate is a semiconductor wafer.

8. A method of claim 1, in which said substrate is a membrane of a mask for X-ray lithography.