Distributed feedback semiconductor laser with monitor

• US 4,815,090 A
• Filed: 03/07/1988
• Issued: 03/21/1989
• Est. Priority Date: 03/12/1987
• Status: Expired due to Term

• Current Assignee: KDDI Corporation
• Original Assignee: Kokusai Denshin Denwa KK (KDDI Corporation)
• Inventors: Usami, Masashi, Akiba, Shigeyuki, Matsushima, Yuichi, Utaka, Katsuyuki
• Primary Examiner(s): Davie, James W.
• Application Number:
  US07/164,819
• Time in Patent Office: 379 Days
• Field of Search: 372/50, 372/29, 372/49, 372/96, 357/19
• US Class Current: 372/50.11
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/12 the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers comprising a photonic bandgap structure H01S5/11; surface-emitting lasers H01S5/18
• CPC Class Codes: H01S 5/164 with window regions comprising semiconductor material with a wider bandgap than the active layer

Abstract

A distributed feedback semiconductor laser with monitor is disclosed, in which the energy gap of a light absorbing layer provided on the window region alone is smaller than the energy gap of the light emitting layer, and in which an independent pn junction isolated from the pn junction in the laser region is provided in or at one edge of the light absorbing layer on the window region.

Claims

1. A distributed feedback semiconductor laser with monitor, comprising:

a laser region having a light emitting layer, an effective periodic refractive index variation along the direction of travel of light and a pn junction provided in the vicinity of the light emitting layer;

a window region formed by burying in at least one end of the light emitting layer a semiconductor layer of a larger energy gap than that of the light emitting layer; and

a light absorbing layer formed on the window region;

wherein the energy gap of the light absorbing layer is set to a value smaller than the energy gap of the light emitting layer, and a pn junction isolated from the pn junction in the laser region is provided in the light absorbing layer on the window region so that a part of a light output from the light emitting layer is monitored through the pn junction in the window region.

2. A distributed feedback semiconductor laser with monitor according to claim 1, further comprising an antireflection coating film provided at one end of the laser region to pass therethrough the main part of the light output from the light emitting layer.

3. A distributed feedback semiconductor laser with monitor according to claim 1, in which the light absorbing layer is formed on a p-type layer having a value of energy gap larger than that of the light emitting layer.

4. A distributed feedback semiconductor laser with monitor, comprising:

a laser region having a light emitting layer, an effective periodic refractive index variation along the direction of travel of light and a pn junction provided in the vicinity of the light emitting layer;

a window region formed by burying in at least one end of the light emitting layer a semiconductor layer of a larger energy gap than that of the light emitting layer; and

a light absorbing layer formed on the window region;

wherein the energy gap of the light absorbing layer is set to a value smaller than the energy gap of the light emitting layer, and a pn junction isolated from the pn junction in the laser region is provided at one edge of the light absorbing layer on the window region so that a part of a light output from the light emitting layer is monitored through the pn junction in the window region.

5. A distributed feedback semiconductor laser with monitor according to claim 4, further comprising an antireflection coating film provided at one end of the laser region to pass therethrough the main part of the light output from the light emitting layer.

6. A distributed feedback semiconductor laser with monitor according to claim 4, in which the light absorbing layer is formed on a p-type layer having a value of energy gap larger than that of the light emitting layer.