Apparatus and process for static drying of substrates

• US 4,816,081 A
• Filed: 02/17/1987
• Issued: 03/28/1989
• Est. Priority Date: 02/17/1987
• Status: Expired due to Term

• Current Assignee: FSI
• Original Assignee: FSI
• Inventors: Mezaki, Cooky, Mehta, Jitesh R., Burkman, Don C.
• Primary Examiner(s): Sneed, H. M. S.
• Assistant Examiner(s): Cohen, Sharon T.
• Application Number:
  US07/015,247
• Time in Patent Office: 770 Days
• Field of Search: 34/15, 34/92, 134/21, 134/25.4, 134/25.1, 134/32, 134/30, 134/134, 134/142, 134/165, 134/184, 134/61, 134/62, 134/66, 134/77, 134/79, 134/83, 134/86, 134/89, 134/135, 134/140, 134/153, 134/155 , 134/159, 134/186, 134/137, 134/157
• US Class Current: 134/30
• CPC Class Codes: F26B 7/00 Drying solid materials or objects by processes using a combination of processes not covered by a single one of groups F26B3/00 and F26B5/00 F26B1/005, F26B5/04, F26B23/026 take precedence
• CPC Class Codes: H01L 21/67034 for drying
• CPC Class Codes: Y10S 134/902 Semiconductor wafer

Abstract

A process for drying semiconductor wafers or similar substrates maintains the substrates in a static position to avoid the generation of undesired particulate. The substrates are maintained within the apparatus at an angle of approximately 30° from the vertical to facilitate complete drainage of the processing fluid. According to this invention, the substrates are positioned in the chamber of the apparatus at the appropriate angle, the chamber is closed in a fluid tight seal and filled with the processing fluid, until the fluid overflows through a vacuum valve. While maintaining the chamber completely filled, vacuum aspiration is continued to degas the chamber. While continuing vacuum aspiration of the chamber, a vacuum assisted drain valve is opened, and clean dry inert gas is introduced above the draining fluid. The draining step assures that any droplets remain with the draining fluid so that the substrates emerge dry as the fluid drains away. The inert gas flow is discontinued and vacuum aspiration is maintained briefly after the chamber has drained. The vacuum aspiration is discontinued and the chamber is repressurized to essentially ambient pressure prior to opening the chamber to remove the dry substrates.

Claims

1. A process for drying substrates comprising:

positioning the substrates in an enclosed chamber, said chamber being openable to permit insertion and removal of substrates and closeable to maintain the chamber in a fluid tight seal, said substrates being supported within the chamber primarily by their edges in spaced apart relationship generally parallel to each other, such that the planar surfaces of the substrates are inclined from the vertical at an angle of approximately 30°

, and said chamber being equipped with fluid inlet valves, fluid drainage valves and vacuum aspiration valves for controlling the introduction of fluids into and drainage and vacuum aspiration of fluids out of said chamber, respectively;

closing the chamber in a fluid tight seal;

filling the chamber with rinsing solution through said fluid inlet valve while maintaining vacuum aspiration through the aspiration valve;

degassing the rinsing solution by vacuum aspiration while maintaining the chamber filled with rinsing solution;

draining the rinsing solution through the drainage valve, while continuing vacuum aspiration and introducing inert gas over the rinsing solution, said draining of the rinsing solution, vacuum aspiration and introduction of inert gas all controlled to allow the substrate to emerge dry as the rinsing solution drains away;

discontinuing the flow of inert gas while continuing vacuum aspiration after draining the chamber; and

repressurizing the chamber and releasing the fluid tight seal;

such that the substrates are maintained in an essentially static condition throughout the drying process.

2. A process according to claim 1, wherein the rinsing solution is selected from halocarbons, alcohols, polyhydric alcohols nd deionized water.

3. A process according to claim 1 and further including rinsing the wafers in the chamber prior to the drying process, and, optionally, further including cleaning the wafers in the chamber prior to the rinsing process.

4. A process according to claim 1, wherein the rinsing solution is deionized water and is maintained at 50°

-100°

C. and filling the chamber with water is continued until the water overflows through the vacuum valve to assure complete filing of the chamber and the vacuum pressure within the filled chamber is maintained at about 100 mm Hg.

5. A process according to claim 1, wherein the substrates are positioned in the chamber, such that the planar surfaces of the wafers are inclined at an angle from the vertical of about 5°

-15°

, and the wafers are maintained at the inclined angle by inclining the chamber.

6. A process according to claim 1, wherein the chamber is heated to a temperature of 50°

to slightly above 100°

C. throughout the drying process.

7. A process according to claim 1, wherein degassing is continued for about 1.5 minutes to a chamber vacuum pressure of between about 300-400 mm Hg.

8. A process according to claim 1, wherein the chamber is formed of or interiorly lined with a fluoropolymer.

9. A process according to claim 1, wherein the fluid tight seal is maintained by pneumatic pressure.

10. A process according to claim 1, wherein the draining is assisted by vacuum aspiration and is controlled at a rate between about 1 liter per minute up to about 1 gallon per second.

11. A process according to claim 1, wherein the inert gas is nitrogen.

12. A process according to claim 1, wherein vacuum aspiration after the draining of the chamber is continued until the vacuum pressure in the chamber is between about 500 to about 750 mm of Hg.

13. A process according to claim 1, wherein the chamber is repressurized with an inert gas to normal atmospheric pressure or slightly above.

14. A process for drying substrates comprising:

positioning the substrates in a chamber with a fluid tight seal;

surrounding and intimately contacting substrates in the chamber with a rinsing solution in the presence of vacuum aspiration;

continuing vacuum aspiration to degas the rinsing solution;

draining the rinsing solution from the chamber in a controlled manner while continuing vacuum aspiration and introducing inert gas over the rinsing solution to cause the surface of the substrate to emerge dry as the rinsing solution drains away;

continuing vacuum aspiration after the rinsing solution has drained to remove all vapor; and

maintaining the substrates throughout the process in an essentially static condition with the planar surface of the substrates at an angle inclined from the vertical of approximately 30°

.

15. A process according to claim 14, wherein the rinsing solutions selected from halocarbons, alcohols, polyhydric alcohols and deioized water.

16. A process according to claim 14 and further including rinsing the substrates in the chamber prior to the drying process, and, optionally, further including cleaning the wafers in the chamber prior to the rinsing process.

17. A process according to claim 14, wherein the rinsing solution is deionized water and is maintained at 50°

-100°

C. and the substrate is surrounded and intimately contacted with water to a vacuum pressure of about 100 mm Hg.

18. A process according to claim 14, wherein the planar surface of the substrate is maintained at an angle inclined from the vertical of about 5°

-15°

.

19. A process according to claim 14, including maintaining a temperature of 50°

to slightly above 100°

C. throughout the process.

20. A process according to claim 14, wherein the degassing is continued for about 1.5 minutes to a pressure of between about 300-400 mm Hg.

21. A process according to claim 14, wherein the draining is assisted by vacuum aspiration and is controlled at a rate between about 1 liter per minute up to about 1 gallon per second.

22. A process according to claim 14, wherein the inert gas is nitrogen.

23. A process according to claim 14, wherein vacuum aspiration after draining is continued until the vacuum pressure is between about 500-750 mm Hg.