Thin film solar cell including a spatially modulated intrinsic layer

• US 4,816,082 A
• Filed: 08/19/1987
• Issued: 03/28/1989
• Est. Priority Date: 08/19/1987
• Status: Expired due to Term

• Current Assignee: United Solar Systems Corp.
• Original Assignee: Energy Conversion Devices
• Inventors: Guha, Subhendu, Ovshinsky, Stanford R., Yang, Chi-Chung
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US07/087,264
• Time in Patent Office: 587 Days
• Field of Search: 136/246, 136/249 TJ, 136/258 AM, 136/259, 357/30 F, 357/30 J, 357/30 K, 357/30 L, 357/30 N
• US Class Current: 136/249
• CPC Class Codes: B22F 9/023 Hydrogen absorption
• CPC Class Codes: H01F 1/0571 in the form of particles, e.g. rapid quenched powders or ribbon flakes
• CPC Class Codes: H01F 1/0573 obtained by reduction or by hydrogen decrepitation or embrittlement
• CPC Class Codes: H01L 31/065 the potential barriers being only of the graded gap type
• CPC Class Codes: H01L 31/075 the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
• CPC Class Codes: H01L 31/076 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/204 including AIVBIV alloys, e.g. SiGe, SiC
• CPC Class Codes: Y02E 10/548 Amorphous silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Claims

1. A solar cell including at least one layer of thin film substantially amorphous intrinsic semiconductor alloy material;

said intrinsic layer characterized by at least a first portion of the thickness thereof having a bandgap and a second portion of the thickness thereof having a second bandgap narrower than the first bandgap portion;

said intrinsic layer sandwiched between oppositely doped layers of semiconductor alloy material;

the bandgap of all portions of the intrinsic layer not contiguous to the intrinsic layer-dopant layer interfaces being less than the bandgap of the dopant layers;

the improvement comprising, in combination;

at least one band gap modifying element introduced into at least a substantial portion of the bulk thickness of the intrinsic layer so as to spatially grade the bandgap of said intrinsic layer over a substantial portion of the bulk thickness thereof, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces.

2. A solar cell as in claim 1, wherein germanium is the band gap modifying element and a substantial portion of the bulk of the intrinsic layer is fabricated from a silicon germanium alloy material.

3. A solar cell as in claim 2, wherein the percentage of germanium incorporated into said silicon germanium alloy varies throughout a substantial portion of the bulk thickness of the intrinsic layer.

4. A solar cell as in claim 3, wherein the percentage of germanium incorporated into said silicon germanium alloy is graded through a substantial portion of the bulk thickness of the intrinsic layer.

5. A solar cell as in claim 4, wherein the percentage of germanium incorporated into said intrinsic layer is graded from a minimum adjacent each of the interfaces thereof with the doped layers to a maximum interiorly of the bulk thickness thereof.

6. A solar cell as in claim 5, wherein the grading of said germanium incorporated into said silicon germanium layer is maintained at said maximum for at least 500 angstroms thickness.

7. A solar cell as in claim 5, wherein the grading of said germanium incorporated into said silicon germanium layer reaches a sharp minimum.

8. A solar cell as in claim 5, wherein said intrinsic layer of silicon germanium alloy material includes a substantially germanium-free region at the interfaces thereof with the doped layers.

13. A solar cell as in claim 4, wherein the band gap of said intrinsic layer of silicon germanium alloy material is graded to about a minimum of 1.2-1.6 eV interiorly of the bulk thickness thereof.

14. A solar cell as in claim 4, wherein the band gap of said intrinsic layer of silicon germanium alloy material is graded to about a minimum of 1.4-1.5 eV interiorly of the bulk thickness thereof.

15. A solar cell as in claim 4, wherein the light incident doped layer is fabricated as a p-type microcrystalline silicon alloy material.

16. A solar cell as in claim 15, wherein said p-type layer further includes a band gap widening element selected from the group consisting essentially of carbon, nitrogen, and combinations thereof.

17. A solar cell as in claim 15, wherein the doped layer opposite said p-type layer is fabricated as an n-type microcrystalline layer of silicon alloy material.

18. A solar cell as in claim 17, wherein said n-type layer further includes a band gap widening element selected from the group consisting essentially of carbon, nitrogen, and combinations thereof.

19. A solar cell as in claim 4, wherein the graded incorporation of germanium into said intrinsic layer is more rapid from the intrinsic layer interface with the light incident doped layer to the region of maximum germanium incorporation interiorly of the bulk thickness thereof as compared to the graded incorporation of germanium from the intrinsic layer interface with the doped layer opposite the light incident doped layer to said region of maximum germanium incorporation.

20. A solar cell as in claim 19, wherein said region of maximum germanium incorporation remains constant for at least 500 angstroms.

21. A solar cell as in claim 4, wherein boron is incorporated into the silicon germanium alloy material of said intrinsic layer so as to improve the collection of photogenerated charge carriers.

22. A solar cell as in claim 21, wherein the boron incorporated into said intrinsic layer is graded to compensate for the graded incorporation of germanium thereinto.

23. A solar cell as in claim 4, further including at least one additional solar cell disposed in optical and electrical series relation to said one solar cell so as to form a tandem photovoltaic structure.

24. A solar cell as in claim 23, wherein at least one of the at least one additional solar cell includes an intrinsic layer of thin film substantially amorphous semiconductor alloy material sandwiched between oppositely doped layers of semiconductor alloy material, said additional intrinsic layer characterized by at least a first portion of the thickness thereof having a band gap and a second portion of the thickness thereof having a band gap narrower than the first band gap;

the band gap of the intrinsic layer of said additional cell being spatially graded throughout a substantial portion of the bulk thickness thereof, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces.

25. A solar cell as in claim 24, wherein the narrower band gap semiconductor alloy material of the intrinsic layer of the additional solar cell differs from the narrower band gap semiconductor alloy material of the intrinsic layer of said one solar cell.

26. A solar cell as in claim 25, wherein the band gap and thickness of the intrinsic layers of the one solar cell and the at least one additional solar cell are such that the current photogenerated in each is substantially matched.

27. A solar cell as in claim 26, wherein the light incident doped layer of each cell is fabricated from p-type microcrystalline semiconductor alloy material and the oppositely disposed doped layer of each cell is fabricated from n-type microcrystalline semiconductor alloy material.

28. A solar cell as in claim 27, further including a dual layered back reflector operatively disposed below the lowermost n-type layer;

said dual layered back reflector fabricated from a conductive oxide uppermost layer and a highly reflective lowermost layer.

29. A solar cell as in claim 28, wherein the uppermost back reflector layer is fabricated from zinc oxide and the lowermost back reflector layer is fabricated from silver.

30. A solar cell as in claim 28, further including a buffer layer operatively disposed between at least one of the intrinsic layers of semiconductor alloy material and at least one of the light incident doped layers in each of the cells of the photovoltaic structure.

9. A solar cell as in claim 9, wherein said intrinsic layer further includes a band gap widening element incorporated adjacent the interfaces thereof with said doped layers.

10. A solar cell as in claim 9, wherein said band gap widening element is selected from the group consisting essentially of hydrogen, carbon, nitrogen, and mixtures thereof.

11. A solar cell as in claim 10, wherein the percentage incorporation of the band gap widening element is graded from a maximum at the interfaces of the intrinsic layer with the doped layers to a minimum adjacent to, but interior of, the bulk thickness of the intrinsic layer.

12. A solar cell as in claim 11, wherein the band gap of the intrinsic layer is substantially continuously graded from a widest band gap portion at each of the interfaces thereof with the oppositely disposed doped layers to a minimum bandgap portion adjacent a central region interiorly of the bulk thickness of the intrinsic layer, said central region having a band gap of approximately 1.2-1.6 eV.

31. A solar cell, including at least one layer of thin film substantially amorphous intrinsic semiconductor alloy material;

said intrinsic layer characterized by at least a first portion of the thickness thereof having a bandgap and a second portion of the thickness thereof having a bandgap narrower than the first bandgap portion;

said intrinsic layer sandwiched between oppositely doped layers of semiconductor alloy material;

the band gap of all portions of the intrinsic layer not contiguous to the intrinsic layer-dopant layer interfaces being less than the band gap of the dopant layers;

the improvement comprising, in combination;

at least one band gap modifying element introduced into at least a substantial portion of the bulk thickness of the intrinsic layer so as to spatially grade the band gap of the intrinsic layer from widest band gap portions adjacent each of the interfaces therof with the doped layers to a minimum band gap portion interiorly of the bulk thickness thereof.

32. A solar cell as in claim 31, wherein at least a substantial portion of the bulk of the intrinsic layer is fabricated from a silicon germanium alloy material;

the germanium content incorporated into said silicon germanium alloy material is graded throughout a substantial portion of the bulk thickness of the intrinsic layer.

33. A solar cell as in claim 32, wherein the germanium percentage incorporated into said intrinsic layer is graded from a minimum adjacent each of the interfaces thereof with the doped layers to a maximum interiorly of the bulk thickness thereof.

34. A solar cell as in claim 33, wherein said intrinsic layer of silicon germanium alloy material includes a substantially germanium-free region at the interfaces thereof with the doped layers.

35. A solar cell as in claim 34, wherein the light incident doped layer is fabricated from p-type microcrystalline silicon alloy material and said p-type layer includes a band gap widening element selected from the group consisting essentially of carbon, nitrogen, and combinations thereof.

36. A solar cell as in claim 35, wherein the doped layer opposite said p-type layer is fabricated from n-type microcrystalline silicon alloy material and said n-type layer further includes a band gap widening element selected from the group consisting essentially of carbon, nitrogen, and combinations thereof.

37. A solar cell as in claim 33, wherein the graded incorporation of germanium into said intrinsic layer is more rapid from the intrinsic layer interface with the light incident doped layer to the region of maximum germanium incorporation interiorly of the bulk thickness thereof as compared to the graded incorporation of germanium from the intrinsic layer interface with the doped layer opposite the light incident doped layer to said region of maximum germanium incorporation.

38. A solar cell as in claim 37, wherein said region of maximum germanium incorporation is constant for at least 500 angstroms.

39. A solar cell as in claim 33, wherein boron is gradually incorporated into the silicon germanium alloy material of said intrinsic layer so as to improve the collection of photogenerated charge carriers.

40. A solar cell as in claim 33, wherein said intrinsic layer further includes a band gap widening element incorporated adjacent the interfaces thereof with each of said doped layers;

said band gap widening element selected from the group consisting essentially of hydrogen, carbon, nitrogen, and mixtures thereof.

41. A solar cell as in claim 40, wherein the bandgap of the intrinsic layer is substantially continuously graded from a widest band gap portion at each of the interfaces thereof with the oppositely disposed doped layers to a minimum band gap portion adjacent a central region interiorly of the bulk thickness of the intrinsic layer.

42. A solar cell as in claim 32, further including at least one additional solar cell disposed in optical and electrical series relation to said one solar cell so as to form a tandem photovoltaic structure.

43. A solar cell as in claim 42, wherein at least one of the at least one additional solar cell includes an intrinsic layer of thin film substantially amorphous semiconductor alloy material sandwiched between oppositely doped layers of semiconductor alloy material, said additional intrinsic layer characterized by at least a first portion of the thickness thereof having a bandgap and a second portion of the thickness thereof having a bandgap narrower than the first band gap;

the band gap of the intrinsic layer of said additional cell being spatially graded throughout a substantial portion of the bulk thickness thereof.

44. A solar cell as in claim 43, wherein the narrower band gap semiconductor alloy material of the additional solar cell differs from the narrower band gap semiconductor alloy material of said one solar cell.

45. A solar cell as in claim 44, wherein the band gap and thickness of the intrinsic layers of the one solar cell and the at least one additional solar cell are such that the current photogenerated in each is substantially matched.