Method of eliminating undesirable carbon product deposited on the inside of a reaction chamber

• US 4,816,113 A
• Filed: 02/24/1988
• Issued: 03/28/1989
• Est. Priority Date: 02/24/1987
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Powell, William A.
• Application Number:
  US07/159,856
• Time in Patent Office: 398 Days
• Field of Search: 134/1, 156/643, 156/646, 156/345, 427/38, 427/39, 427/45.1, 427/47, 427/122, 204/192.15, 204/192.3, 204/192.32, 204/192.35, 204/298, 118/728, 118/50.1, 118/620, 118/623
• US Class Current: 134/1.1
• CPC Class Codes: B01J 19/0026 Avoiding carbon deposits inhibiting incrustation in general, C23F14/00, C23F15/00
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23G 5/00 Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Abstract

The inside of a reaction chamber for CVD is cleaned after deposition of a carbon film. When crystalline carbon or diamond-like carbon is formed in the chamber, undesirable deposition occurs on the inside of the reaction chamber. The sticky carbon deposition is removed by etching, making use of oxygen or oxygen compound gas rather than fluorine or chlorine compound gas which tends to damage the inside of the reaction chamber.

Claims

1. An etching method for removing carbon deposition sticking on the inside of the reaction chamber of a deposition apparatus after completing the deposition of a material consisting mainly of carbon on a substrate, said method comprising:

evacuating said reaction chamber;

inputting oxygen or oxygen compound gas as the etchant gas to said reaction chamber; and

inputting an electromagnetic power to said reaction chamber to produce a plasma gas derived from said etchant gas.

2. The method of claim 1 wherein said carbon material is diamond.

3. The method of claim 1 wherein said carbon material is DLC.

4. The method of claim 1 wherein said electromagnetic power is microwave.

5. The method of claim 2 wherein said microwave is inputted to said etchant gas while said etchant gas is subjected to a magnetic field.

6. The method of claim 5 wherein the pressure of said etchant gas is 0.1 to 10 Torr.

7. The method of claim 1 wherein said electromagnetic power is an r.f. power.

8. The method of claim 7 wherein the pressure of said etching gas is 0.001 to 0.5 Torr.

9. The method of claim 8 wherein the temperature is chosen between room temperature and 450°

C.

10. The method of claim 6 wherein said etching is carried out while the inside of said chamber is irradiated with light.

11. The method of claim 10 wherein said light is an ultraviolet light.

12. The method of claim 3 wherein the inside of said reaction chamber is heated to 500°

-1000°

C.

13. The method of claim 1 wherein the etching is carried out before another carbon deposition.